WILLSEMI WPMD2084-6/TR
| Hersteller | WILLSEMIAsian Brands |
| Herst.-Teilenr. | WPMD2084-6/TR |
| LCSC-Nr. | C719457 |
| Verp. | DFN-6L(2x2) |
| Kundennummer | |
| Hauptmerkm. | 20V 3.3A 400mV 1.5W 2 P-Channel DFN-6L(2x2) Single FETs, MOSFETs |
| Datenblatt | WILLSEMI WPMD2084-6/TR |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WILLSEMI | |
| Verp. | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 444pF | |
| Gate Charge(Qg) | 5.8nC@4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WILLSEMI | |
| Verp. | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 444pF | |
| Gate Charge(Qg) | 5.8nC@4.5V |
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Beschreibung
KI-Übersetzung
WpMD2084 is a dual P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard WpMD2084 is a lead-free product.
Merkmale
KI-Übersetzung
- Trench technology
- Ultra-high density cell design
- Excellent on-resistance
- Ultra-low threshold voltage
- Compact DFN2X2-6L package
Anwendungen
KI-Übersetzung
- DC/DC converter
- Power converter circuit
- Load/power switch for portable devices
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.2983 | $ 0.30 |
| 200+ | $ 0.1155 | $ 23.10 |
| 500+ | $ 0.1114 | $ 55.70 |
| 1,000+ | $ 0.1094 | $ 109.40 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WILLSEMI | |
| Verp. | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 444pF | |
| Gate Charge(Qg) | 5.8nC@4.5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WILLSEMI | |
| Verp. | DFN-6L(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.3A | |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 444pF | |
| Gate Charge(Qg) | 5.8nC@4.5V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
WpMD2084 is a dual P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard WpMD2084 is a lead-free product.
Merkmale
KI-Übersetzung
- Trench technology
- Ultra-high density cell design
- Excellent on-resistance
- Ultra-low threshold voltage
- Compact DFN2X2-6L package
Anwendungen
KI-Übersetzung
- DC/DC converter
- Power converter circuit
- Load/power switch for portable devices
C719457 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

