Immagini a scopo illustrativo
Modelli EDAEasyEDA
Ampleon BLF871S,112
| Produttore | |
| Cod. Prod. | BLF871S,112 |
| Cod. LCSC | C7086881 |
| Imballo | SOT-467B |
| Numero Cliente | |
| Attr. chiave | 89V 1.4V 210mΩ 1 N-channel N-Channel SOT-467B Single FETs, MOSFETs |
| Scheda Tecnica | Ampleon BLF871S,112 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Ampleon | |
| Imballo | SOT-467B | |
| Drain to Source Voltage | 89V | |
| Output Capacitance(Coss) | 30pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| RDS(on) | 210mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 95pF | |
| Vgs | 13V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Ampleon | |
| Imballo | SOT-467B | |
| Drain to Source Voltage | 89V | |
| Output Capacitance(Coss) | 30pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Tipo | Descrizione | |
|---|---|---|
| RDS(on) | 210mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 95pF | |
| Vgs | 13V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
A 100 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications. The transistor delivers 100 W of power across a wide bandwidth up to 1 GHz. Its excellent ruggedness and broadband performance make it ideal for digital transmitter applications.
Caratteristiche
Traduzione AI
- Two-tone performance at 860 MHz, VDS = 40 V, IDq = 0.5 A:
- Peak envelope power load power = 100 W
- Power gain = 21 dB
- Drain efficiency = 47%
- Third-order intermodulation distortion = -35 dBc
- DVB performance at 858 MHz, VDS = 40 V, IDq = 0.5 A:
- Average output power = 24 W
- Power gain = 22 dB
- Drain efficiency = 33%
- Third-order intermodulation distortion = -34 dBc (4.3 MHz from center frequency)
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant with RoHS Directive 2002/95/EC
Applicazioni
Traduzione AI
- UHF band communication transmitter applications
- UHF band industrial applications
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 331.667 | $ 331.67 |
| 200+ | $ 132.3386 | $ 26467.72 |
| 500+ | $ 127.9151 | $ 63957.55 |
| 1,000+ | $ 125.7314 | $ 125731.40 |
Package Standard20/Full Tray | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Ampleon | |
| Imballo | SOT-467B | |
| Drain to Source Voltage | 89V | |
| Output Capacitance(Coss) | 30pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| RDS(on) | 210mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 95pF | |
| Vgs | 13V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Ampleon | |
| Imballo | SOT-467B | |
| Drain to Source Voltage | 89V | |
| Output Capacitance(Coss) | 30pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Tipo | Descrizione | |
|---|---|---|
| RDS(on) | 210mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 95pF | |
| Vgs | 13V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
A 100 W LDMOS RF power transistor designed for broadcast transmitter and industrial applications. The transistor delivers 100 W of power across a wide bandwidth up to 1 GHz. Its excellent ruggedness and broadband performance make it ideal for digital transmitter applications.
Caratteristiche
Traduzione AI
- Two-tone performance at 860 MHz, VDS = 40 V, IDq = 0.5 A:
- Peak envelope power load power = 100 W
- Power gain = 21 dB
- Drain efficiency = 47%
- Third-order intermodulation distortion = -35 dBc
- DVB performance at 858 MHz, VDS = 40 V, IDq = 0.5 A:
- Average output power = 24 W
- Power gain = 22 dB
- Drain efficiency = 33%
- Third-order intermodulation distortion = -34 dBc (4.3 MHz from center frequency)
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant with RoHS Directive 2002/95/EC
Applicazioni
Traduzione AI
- UHF band communication transmitter applications
- UHF band industrial applications
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |