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Cmos CMD603A
| Hersteller | CmosAsian Brands |
| Herst.-Teilenr. | CMD603A |
| LCSC-Nr. | C6939703 |
| Verp. | TO-252-4L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH+P-CH ARR 60V 13A TO-252-4L |
| Datenblatt | Cmos CMD603A |
| Alternativteile | 3 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | TO-252-4L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 61pF;86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF;38pF | |
| RDS(on) | 55mΩ;95mΩ | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 400pF;920pF | |
| Gate Charge(Qg) | 8nC@10V;16nC@10V | |
| Type | N-Channel + P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | TO-252-4L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 61pF;86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF;38pF | |
| RDS(on) | 55mΩ;95mΩ | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 400pF;920pF | |
| Gate Charge(Qg) | 8nC@10V;16nC@10V | |
| Type | N-Channel + P-Channel |
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Beschreibung
KI-Übersetzung
The CMD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Merkmale
KI-Übersetzung
- 60V 13A RDS(ON)≤55mΩ @ VGS=10V
- RDS(ON)≤66mΩ @ VGS=4.5V
- -60V -16A RDS(ON)≤95mΩ @ VGS=-10V
- High Density Cell Design For Ultra Low On Resistance
Anwendungen
KI-Übersetzung
- Power Management
- Load Switch
- DC/DC Converter
Vorrätig: 71
71 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.2838$ 0.2697 | $ 0.27 |
| 10+ | $ 0.225$ 0.2138 | $ 2.14 |
| 30+ | $ 0.1998$ 0.1899 | $ 5.70 |
| 100+ | $ 0.1683$ 0.1599 | $ 15.99 |
| 500+ | $ 0.1543$ 0.1466 | $ 73.30 |
| 1,000+ | $ 0.136$ 0.1292 | $ 129.20 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | TO-252-4L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 61pF;86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF;38pF | |
| RDS(on) | 55mΩ;95mΩ | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 400pF;920pF | |
| Gate Charge(Qg) | 8nC@10V;16nC@10V | |
| Type | N-Channel + P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Cmos | |
| Verp. | TO-252-4L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 61pF;86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 27W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF;38pF | |
| RDS(on) | 55mΩ;95mΩ | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 400pF;920pF | |
| Gate Charge(Qg) | 8nC@10V;16nC@10V | |
| Type | N-Channel + P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CMD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Merkmale
KI-Übersetzung
- 60V 13A RDS(ON)≤55mΩ @ VGS=10V
- RDS(ON)≤66mΩ @ VGS=4.5V
- -60V -16A RDS(ON)≤95mΩ @ VGS=-10V
- High Density Cell Design For Ultra Low On Resistance
Anwendungen
KI-Übersetzung
- Power Management
- Load Switch
- DC/DC Converter
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |