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EDA-ModelleEasyEDA
Central MPSA64 PBFREE
| Hersteller | |
| Herst.-Teilenr. | MPSA64 PBFREE |
| LCSC-Nr. | C6595813 |
| Verp. | TO-92-3 |
| Kundennummer | |
| Hauptmerkm. | 30V 20000 500mA PNP TO-92-3 Single Bipolar Transistors RoHS |
| Datenblatt | Central MPSA64 PBFREE |
| Alternativteile | 6 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Central | |
| Verp. | TO-92-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2V | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 20000 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 625mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Central | |
| Verp. | TO-92-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2V | |
| Transition frequency(fT) | 125MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 20000 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 625mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.5V |
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Beschreibung
KI-Übersetzung
CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors fabricated using epitaxial planar technology, designed for applications requiring extremely high gain.
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| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.189 | $ 0.19 |
| 200+ | $ 0.0755 | $ 15.10 |
| 500+ | $ 0.0729 | $ 36.45 |
| 1,000+ | $ 0.0717 | $ 71.70 |
Standardgehäuse2500/Full Bag | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Central | |
| Verp. | TO-92-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2V | |
| Transition frequency(fT) | 125MHz | |
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 20000 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 625mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.5V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Hersteller | Central | |
| Verp. | TO-92-3 | |
| Vbe Saturation(VBE(sat)) | - | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2V | |
| Transition frequency(fT) | 125MHz |
| Typ | Beschreibung | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 30V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 20000 | |
| Current - Collector(Ic) | 500mA | |
| Pd - Power Dissipation | 625mW | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 1.5V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors fabricated using epitaxial planar technology, designed for applications requiring extremely high gain.
C6595813 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |