MICROCHIP 25AA160CT-I/MNY
| Producent | |
| Nr części prod. | 25AA160CT-I/MNY |
| Nr LCSC | C616517 |
| Opak. | TDFN-8-EP(2x3) |
| Numer Klienta | |
| Klucz. cechy | 16Kbit 10MHz SPI TDFN-8-EP(2x3) Memory RoHS |
| Karta Katalogowa | MICROCHIP 25AA160CT-I/MNY |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 3 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | MICROCHIP | |
| Opak. | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA | |
| Clock Frequency | 10MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | MICROCHIP | |
| Opak. | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 10MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
Opis
The 25XX160C/D are 16-Kbit Serial Electrically Erasable PROMs (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
Funkcje
- 10 MHz Maximum Clock Speed
- Low-Power CMOS Technology
- Maximum Write current: 5 mA at 5.5V
- Read current: 5 mA at 5.5V, 10 MHz
- Standby current: 5 μA at 5.5V
- 2048x8-bit Organization
- 16-Byte Page ("C" version devices)
- 32-Byte Page ("D" version devices)
- Self-Timed Erase and Write Cycles (5 ms maximum)
- Block Write Protection: Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
- Sequential Read
- High Reliability
- Endurance: >1M erase/write cycles
- Data retention: >200 years
- ESD protection: >4000V
- Temperature Ranges Supported
- Industrial (I): -40℃ to +85℃
- Extended (E): -40℃ to +125℃
- RoHS Compliant
- Automotive AEC-Q100 Qualified
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.309 | $ 1.31 |
| 10+ | $ 1.0854 | $ 10.85 |
| 30+ | $ 0.9621 | $ 28.86 |
| 100+ | $ 0.8233 | $ 82.33 |
| 500+ | $ 0.7617 | $ 380.85 |
| 1,000+ | $ 0.7339 | $ 733.90 |
Standardowa Obudowa3300/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | MICROCHIP | |
| Opak. | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA | |
| Clock Frequency | 10MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | MICROCHIP | |
| Opak. | TDFN-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 1.8V~5.5V;5mA |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 10MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 5ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
Opis
The 25XX160C/D are 16-Kbit Serial Electrically Erasable PROMs (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
Funkcje
- 10 MHz Maximum Clock Speed
- Low-Power CMOS Technology
- Maximum Write current: 5 mA at 5.5V
- Read current: 5 mA at 5.5V, 10 MHz
- Standby current: 5 μA at 5.5V
- 2048x8-bit Organization
- 16-Byte Page ("C" version devices)
- 32-Byte Page ("D" version devices)
- Self-Timed Erase and Write Cycles (5 ms maximum)
- Block Write Protection: Protect none, 1/4, 1/2 or all of array
- Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
- Sequential Read
- High Reliability
- Endurance: >1M erase/write cycles
- Data retention: >200 years
- ESD protection: >4000V
- Temperature Ranges Supported
- Industrial (I): -40℃ to +85℃
- Extended (E): -40℃ to +125℃
- RoHS Compliant
- Automotive AEC-Q100 Qualified
C616517 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| 25AA160DT-I/MNY | MICROCHIP | TDFN-8-EP(2x3) | 4 | $ 0.9552 | ||
| CAT25160VP2I-GT3-CS | onsemi | TDFN-8(2x3) | 0 | $ 0.8471 | ||
| CAT25C16ZD2GI-26696 | onsemi | TDFN-8(2x3) | 0 | $ 2.6473 |

