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MICROCHIP 25AA160CT-I/MNY

Producent
Nr części prod.
25AA160CT-I/MNY
Nr LCSC
C616517
Opak.
TDFN-8-EP(2x3)
Numer Klienta
Klucz. cechy
16Kbit 10MHz SPI TDFN-8-EP(2x3) Memory RoHS
Karta KatalogowaMICROCHIP 25AA160CT-I/MNY
Zgodność z RoHS1 dokumentów dostępnych
Części alternatywne3
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.(Tylko do wglądu)Suma całkowita
1+$ 1.309$ 1.31
10+$ 1.0854$ 10.85
30+$ 0.9621$ 28.86
100+$ 0.8233$ 82.33
500+$ 0.7617$ 380.85
1,000+$ 0.7339$ 733.90
Standardowa Obudowa3300/Full Reel
Lepsza cena za większą ilość?
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Memory/Memory
ProducentMICROCHIP
Opak.TDFN-8-EP(2x3)
Operating Temperature-40℃~+85℃
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size16Kbit
Voltage - Supply1.8V~5.5V;5mA
Clock Frequency10MHz
Access Time-
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)5ms
Standby Supply Current5uA
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Opis

Tłumaczenie AI

The 25XX160C/D are 16-Kbit Serial Electrically Erasable PROMs (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Funkcje

Tłumaczenie AI
  • 10 MHz Maximum Clock Speed
  • Low-Power CMOS Technology
  • Maximum Write current: 5 mA at 5.5V
  • Read current: 5 mA at 5.5V, 10 MHz
  • Standby current: 5 μA at 5.5V
  • 2048x8-bit Organization
  • 16-Byte Page ("C" version devices)
  • 32-Byte Page ("D" version devices)
  • Self-Timed Erase and Write Cycles (5 ms maximum)
  • Block Write Protection: Protect none, 1/4, 1/2 or all of array
  • Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
  • Sequential Read
  • High Reliability
  • Endurance: >1M erase/write cycles
  • Data retention: >200 years
  • ESD protection: >4000V
  • Temperature Ranges Supported
  • Industrial (I): -40℃ to +85℃
  • Extended (E): -40℃ to +125℃
  • RoHS Compliant
  • Automotive AEC-Q100 Qualified

Części alternatywne

MPNProducentOpakowanieDostępnośćCena jednostkowa
25AA160DT-I/MNYMICROCHIPTDFN-8-EP(2x3)4$ 0.9552
CAT25160VP2I-GT3-CSonsemiTDFN-8(2x3)0$ 0.8471
CAT25C16ZD2GI-26696onsemiTDFN-8(2x3)0$ 2.6473