MICROCHIP CDLL963D
| Produttore | |
| Cod. Prod. | CDLL963D |
| Cod. LCSC | C6148692 |
| Imballo | DO-213AA |
| Numero Cliente | |
| Attr. chiave | 1 Independent 12V DO-213AA Single Zener Diodes |
| Scheda Tecnica | MICROCHIP CDLL963D |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 1uA@9.1V | |
| Impedance(Zzt) | 11.5Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 700Ω |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 1uA@9.1V | |
| Impedance(Zzt) | 11.5Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 700Ω |
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Caratteristiche
Traduzione AI
- 1N962BUR-1 to 1N986BUR-1 series available in JAN, JANTX, and JANTXV standard products in January
- Leadless surface mount package
- Metallurgical bond
- Operating temperature range: -65°C to +175°C
- Storage temperature range: -65°C to +175°C
- DC power dissipation: 500mW at TEC = +125°C
- Power derating: 10mW/°C above TEC = +125°C
- Forward voltage maximum 1.1V at 200mA
- Package: DO-213AA, hermetic glass package (MELF, SOD-80, LL34)
- Lead finish: Tin/Lead
- Thermal resistance (ROJEC): 100°C/W max at L = 0 inches
- Thermal impedance (ZJX): 35°C/W max
- Polarity: Positive end marked (cathode) when diode is in operation
- The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C; the COE of the mounting surface system should be selected to match the device
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 22.4174 | $ 22.42 |
| 200+ | $ 8.9449 | $ 1788.98 |
| 500+ | $ 8.6463 | $ 4323.15 |
| 1,000+ | $ 8.4994 | $ 8499.40 |
Package Standard100/Full Bag | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 1uA@9.1V | |
| Impedance(Zzt) | 11.5Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 700Ω |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 1uA@9.1V | |
| Impedance(Zzt) | 11.5Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 12V | |
| Impedance(Zzk) | 700Ω |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- 1N962BUR-1 to 1N986BUR-1 series available in JAN, JANTX, and JANTXV standard products in January
- Leadless surface mount package
- Metallurgical bond
- Operating temperature range: -65°C to +175°C
- Storage temperature range: -65°C to +175°C
- DC power dissipation: 500mW at TEC = +125°C
- Power derating: 10mW/°C above TEC = +125°C
- Forward voltage maximum 1.1V at 200mA
- Package: DO-213AA, hermetic glass package (MELF, SOD-80, LL34)
- Lead finish: Tin/Lead
- Thermal resistance (ROJEC): 100°C/W max at L = 0 inches
- Thermal impedance (ZJX): 35°C/W max
- Polarity: Positive end marked (cathode) when diode is in operation
- The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C; the COE of the mounting surface system should be selected to match the device
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

