Qorvo UF3SC120016K3S
| Hersteller | |
| Herst.-Teilenr. | UF3SC120016K3S |
| LCSC-Nr. | C5979188 |
| Verp. | TO-247-3 |
| Kundennummer | |
| Hauptmerkm. | 1.2kV 107A 517W N-Channel TO-247-3 Single FETs, MOSFETs |
| Datenblatt | Qorvo UF3SC120016K3S |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Qorvo | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 107A | |
| Pd - Power Dissipation | 517W | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Qorvo | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 1.2kV |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 107A | |
| Pd - Power Dissipation | 517W | |
| Type | N-Channel |
Beschreibung
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. Its standard gate drive characteristics enable true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-247-3L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it well-suited — when used with the recommended RC snubber — for switching inductive loads and any application requiring standard gate drive.
Merkmale
- Typical on-resistance R<sub>DS(on)</sub>, typ: 16mΩ
- Maximum operating temperature: 175°C
- Excellent reverse recovery performance
- Low gate charge
- Low intrinsic capacitance
- ESD protection, HBM Class 2
- Ultra-low switching losses (RC snubber losses negligible under typical operating conditions)
Anwendungen
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 124.5588 | $ 124.56 |
| 210+ | $ 49.7003 | $ 10437.06 |
| 510+ | $ 48.0403 | $ 24500.55 |
| 990+ | $ 47.2187 | $ 46746.51 |
Standardgehäuse30/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Qorvo | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 107A | |
| Pd - Power Dissipation | 517W | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Qorvo | |
| Verp. | TO-247-3 | |
| Drain to Source Voltage | 1.2kV |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 107A | |
| Pd - Power Dissipation | 517W | |
| Type | N-Channel |
Beschreibung
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. Its standard gate drive characteristics enable true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-247-3L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it well-suited — when used with the recommended RC snubber — for switching inductive loads and any application requiring standard gate drive.
Merkmale
- Typical on-resistance R<sub>DS(on)</sub>, typ: 16mΩ
- Maximum operating temperature: 175°C
- Excellent reverse recovery performance
- Low gate charge
- Low intrinsic capacitance
- ESD protection, HBM Class 2
- Ultra-low switching losses (RC snubber losses negligible under typical operating conditions)
Anwendungen
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |