GeneSiC Semiconductor MBRT30020R
| Hersteller | |
| Herst.-Teilenr. | MBRT30020R |
| LCSC-Nr. | C5795497 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 1 Pair Common Anode 300A 20V 750mV@150A Diode Arrays RoHS |
| Datenblatt | GeneSiC Semiconductor MBRT30020R |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 300A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Reverse Leakage Current (Ir) | 1mA@20V | |
| Voltage - Forward(Vf@If) | 750mV@150A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 1 Pair Common Anode |
| Typ | Beschreibung | |
|---|---|---|
| Current - Rectified | 300A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Reverse Leakage Current (Ir) | 1mA@20V | |
| Voltage - Forward(Vf@If) | 750mV@150A |
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Merkmale
KI-Übersetzung
- High surge capability
- Models with repetitive peak reverse voltage (VRRM) from 20V to 40V
- Isolated package
- Electrically insulated base plate
- Insensitive to ESD
- Triple tower package
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 236.8153 | $ 236.82 |
| 200+ | $ 94.491 | $ 18898.20 |
| 480+ | $ 91.3331 | $ 43839.89 |
| 1,000+ | $ 89.7739 | $ 89773.90 |
Standardgehäuse40/Full Bag | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 300A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Reverse Leakage Current (Ir) | 1mA@20V | |
| Voltage - Forward(Vf@If) | 750mV@150A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Hersteller | GeneSiC Semiconductor | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 1 Pair Common Anode |
| Typ | Beschreibung | |
|---|---|---|
| Current - Rectified | 300A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 20V | |
| Reverse Leakage Current (Ir) | 1mA@20V | |
| Voltage - Forward(Vf@If) | 750mV@150A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- High surge capability
- Models with repetitive peak reverse voltage (VRRM) from 20V to 40V
- Isolated package
- Electrically insulated base plate
- Insensitive to ESD
- Triple tower package
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

