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GSI Technology GS816118DGD-333I

Produttore
GSI TechnologyAsian Brands
Cod. Prod.
GS816118DGD-333I
Cod. LCSC
C5720098
Imballo
FPBGA-165(13x15)
Numero Cliente
Attr. chiave
18Mbit FPBGA-165(13x15) Memory RoHS
Scheda TecnicaGSI Technology GS816118DGD-333I
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 87.9214$ 87.92
216+$ 35.0816$ 7577.63
504+$ 33.9102$ 17090.74
1,008+$ 33.3309$ 33597.55
Package Standard36/Full Tray
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreGSI Technology
ImballoFPBGA-165(13x15)
Operating Temperature-40℃~+85℃
FeaturesAuto power-down function;Boundary scan (JTAG) function
Memory Size18Mbit
Voltage - Supply-;2.5V~3.3V
Access Time-
Standby Supply Current-
Interface-
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Descrizione

Traduzione AI

GS816118D(GT/D)/GS816132D(D)/GS816136D(GT/D) is an 18874368-bit high-performance synchronous SRAM with a 2-bit burst address counter. Although this type was originally developed to support Level 2 cache applications for high-performance CPUs, the device can now be used in synchronous SRAM applications ranging from DSP main memory to network chipset support.

Caratteristiche

Traduzione AI
  • FT pin for user-configurable flow-through or pipelined operation
  • Single-cycle deselect (SCD) operation
  • IEEE 1149.1 JTAG-compatible boundary scan
  • 2.5 V or 3.3 V ±10% core power supply
  • 2.5 V or 3.3 V I/O power supply
  • LBO pin for linear or interleaved burst mode
  • Internal input resistors on mode pins allow pins to float
  • Byte write (BW) and/or global write (GW) operation
  • Internal self-timed write cycle
  • Auto power-down for portable applications
  • JEDEC standard 165-ball BGA package
  • RoHS-compliant 100-pin TQFP and 165-ball BGA packages available

Applicazioni

Traduzione AI
  • Secondary cache applications supporting high-performance CPUs
  • DSP main memory
  • Network chipset support