Infineon FP100R12N2T7B11BPSA1

Producent	Infineon
Nr części prod.	FP100R12N2T7B11BPSA1
Nr LCSC	C5707224
Opak.	-
Numer Klienta
Klucz. cechy	20mW 100A 1.2kV FS (Field Stop) IGBT Modules RoHS
Karta Katalogowa	Infineon FP100R12N2T7B11BPSA1
Zgodność z RoHS	1 dokumentów dostępnych

Specyfikacje Produktu

Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Producent	Infineon
Opak.	-
Td(off)	324ns
Pd - Power Dissipation	20mW
Td(on)	171ns
Current - Collector(Ic)	100A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	76pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.5V@15V,100A
Gate Charge(Qg)	1.8uC@600V
Vce Saturation(VCE(sat))	1.5V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	6.42mJ
Turn-On Energy (Eon)	10.4mJ
Operating Temperature	-40℃~+175℃@(Tj)
Input Capacitance(Cies)	21.7nF@25V
Output Capacitance(Coes)	-

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Producent	Infineon
Opak.	-
Td(off)	324ns
Pd - Power Dissipation	20mW
Td(on)	171ns
Current - Collector(Ic)	100A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	76pF
IGBT Type	FS (Field Stop)

Typ	Opis
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.5V@15V,100A
Gate Charge(Qg)	1.8uC@600V
Vce Saturation(VCE(sat))	1.5V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	6.42mJ
Turn-On Energy (Eon)	10.4mJ
Operating Temperature	-40℃~+175℃@(Tj)
Input Capacitance(Cies)	21.7nF@25V
Output Capacitance(Coes)	-

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Szt.	Cena jedn.(Tylko do wglądu)	Suma całkowita
1+	$ 214.002	$ 214.00
195+	$ 85.3893	$ 16650.91
495+	$ 82.5348	$ 40854.73
1,005+	$ 81.1262	$ 81531.83
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Wszystko

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Producent	Infineon
Opak.	-
Td(off)	324ns
Pd - Power Dissipation	20mW
Td(on)	171ns
Current - Collector(Ic)	100A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	76pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.5V@15V,100A
Gate Charge(Qg)	1.8uC@600V
Vce Saturation(VCE(sat))	1.5V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	6.42mJ
Turn-On Energy (Eon)	10.4mJ
Operating Temperature	-40℃~+175℃@(Tj)
Input Capacitance(Cies)	21.7nF@25V
Output Capacitance(Coes)	-

Typ	Opis
Kategoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Producent	Infineon
Opak.	-
Td(off)	324ns
Pd - Power Dissipation	20mW
Td(on)	171ns
Current - Collector(Ic)	100A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	76pF
IGBT Type	FS (Field Stop)

Typ	Opis
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.5V@15V,100A
Gate Charge(Qg)	1.8uC@600V
Vce Saturation(VCE(sat))	1.5V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	6.42mJ
Turn-On Energy (Eon)	10.4mJ
Operating Temperature	-40℃~+175℃@(Tj)
Input Capacitance(Cies)	21.7nF@25V
Output Capacitance(Coes)	-