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Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia PMV15UNEAR
| Producent | |
| Nr części prod. | PMV15UNEAR |
| Nr LCSC | C553081 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 20V 7A SOT-23 |
| Karta Katalogowa | Nexperia PMV15UNEAR |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 610mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.22nF | |
| Gate Charge(Qg) | 17nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 610mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.22nF | |
| Gate Charge(Qg) | 17nC@4.5V |
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Opis
Tłumaczenie AI
N-channel enhancement-mode FET using trench MOSFET technology, housed in a small SOT23 (TO-236AB) SMD plastic package.
Funkcje
Tłumaczenie AI
- Low threshold voltage
- Extended temperature range Tj = 175℃
- Trench MOSFET technology
- ESD protection >500 V HBM (Class H1B)
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
- Relay driver - High-speed line driver - Low-side load switch - Switching circuit
Brak w magazynie
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Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 5+ | $ 0.3155 | $ 1.58 |
| 50+ | $ 0.267 | $ 13.35 |
| 150+ | $ 0.2462 | $ 36.93 |
| 500+ | $ 0.2145 | $ 107.25 |
| 3,000+ | $ 0.2029 | $ 608.70 |
| 6,000+ | $ 0.196 | $ 1176.00 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 610mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.22nF | |
| Gate Charge(Qg) | 17nC@4.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 610mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | |
| RDS(on) | 15mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.22nF | |
| Gate Charge(Qg) | 17nC@4.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
N-channel enhancement-mode FET using trench MOSFET technology, housed in a small SOT23 (TO-236AB) SMD plastic package.
Funkcje
Tłumaczenie AI
- Low threshold voltage
- Extended temperature range Tj = 175℃
- Trench MOSFET technology
- ESD protection >500 V HBM (Class H1B)
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
- Relay driver - High-speed line driver - Low-side load switch - Switching circuit
C553081 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| AO3416A(XBLW) | XBLW | SOT-23-3L | 3,100 | $ 0.0466 | ||
| LW3416AM | Lewa Micro | SOT-23 | 2,700 | $ 0.0628 | ||
| LW3416AL | Lewa Micro | SOT-23-3L | 3,000 | $ 0.0691 | ||
| YFW2320MI | YFW | SOT-23-3L | 275 | $0.0938 $0.0987 | ||
| AO3416 | ElecSuper | SOT-23 | 20,332 | $ 0.0387 | ||
| AO3416A | ElecSuper | SOT-23-3L | 2,930 | $ 0.0424 | ||
| DMG3414U-HXY | HXY MOSFET | SOT-23 | 450 | $0.0483 $0.0508 | ||
| IRLML6244PBF-HXY | HXY MOSFET | SOT-23 | 200 | $0.0666 $0.0701 | ||
| Si2342DS-T1-GE3-HXY | HXY MOSFET | SOT-23 | 40 | $0.0740 $0.0778 | ||
| PMV20XNER | Nexperia | SOT-23 | 5,440 | $ 0.2528 |