Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia PH2925U,115
| Producent | |
| Nr części prod. | PH2925U,115 |
| Nr LCSC | C552611 |
| Opak. | SOT-669 |
| Numer Klienta | |
| Klucz. cechy | 62.5W 25V 100A 950mV 2.3mΩ@4.5V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Nexperia PH2925U,115 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 1.17nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 814pF | |
| RDS(on) | 2.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.15nF | |
| Gate Charge(Qg) | 92nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 1.17nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 814pF | |
| RDS(on) | 2.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.15nF | |
| Gate Charge(Qg) | 92nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
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Opis
Tłumaczenie AI
Ultra-low level N-channel enhancement-mode FET in a plastic package using TrenchMOS technology. This product is designed and qualified for computing, communications, consumer, and industrial applications.
Funkcje
Tłumaczenie AI
- Low thermal resistance, higher operating power
- Low on-resistance, reduced conduction losses
- Direct interface with low-voltage gate drivers
Zastosowania
Tłumaczenie AI
- DC-DC converter
- Portable devices
- Laptop computers
- Switching mode power supplies
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.5877 | $ 0.59 |
| 10+ | $ 0.4798 | $ 4.80 |
| 30+ | $ 0.4242 | $ 12.73 |
| 100+ | $ 0.3702 | $ 37.02 |
| 500+ | $ 0.3394 | $ 169.70 |
| 1,500+ | $ 0.3224 | $ 483.60 |
Standardowa Obudowa1500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 1.17nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 814pF | |
| RDS(on) | 2.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.15nF | |
| Gate Charge(Qg) | 92nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-669 | |
| Output Capacitance(Coss) | 1.17nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 814pF | |
| RDS(on) | 2.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.15nF | |
| Gate Charge(Qg) | 92nC@4.5V | |
| Vgs | ±10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Ultra-low level N-channel enhancement-mode FET in a plastic package using TrenchMOS technology. This product is designed and qualified for computing, communications, consumer, and industrial applications.
Funkcje
Tłumaczenie AI
- Low thermal resistance, higher operating power
- Low on-resistance, reduced conduction losses
- Direct interface with low-voltage gate drivers
Zastosowania
Tłumaczenie AI
- DC-DC converter
- Portable devices
- Laptop computers
- Switching mode power supplies
C552611 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| PSMN1R7-30YL,115 | Nexperia | SOT-669 | 40 | $ 3.4264 | ||
| PSMN2R0-30YLE,115 | Nexperia | SOT-669 | 1,504 | $ 1.2185 | ||
| PSMN1R5-40YSDX | Nexperia | SOT-669 | 38 | $ 2.0731 | ||
| PSMN1R9-40YSDX | Nexperia | SOT-669 | 0 | $ 1.6608 | ||
| BUK9Y1R9-40HX | Nexperia | SOT-669 | 0 | $ 1.3322 | ||
| PH2625L,115 | Nexperia | SOT-669 | 0 | $ 0.9246 | ||
| BUK9Y2R4-40HX | Nexperia | SOT-669 | 0 | $ 1.5963 | ||
| PSMN2R5-40YLDX | Nexperia | SOT-669 | 0 | $ 1.5979 | ||
| PSMN2R2-40YSDX | Nexperia | SOT-669 | 0 | $ 1.3443 | ||
| PSMN1R5-30YL,115 | Nexperia | SOT-669 | 0 | $ 1.8978 |