Nexperia PDTA143ZMB,315
| Producent | |
| Nr części prod. | PDTA143ZMB,315 |
| Nr LCSC | C552101 |
| Opak. | SOT-883-3 |
| Numer Klienta | |
| Klucz. cechy | 50V 100 250mW PNP 1 PNP Pre-Biased SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Karta Katalogowa | Nexperia PDTA143ZMB,315 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 180MHz | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 5V | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 12 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 180MHz | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 5V | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | - |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 12 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
PNP resistor-equipped transistor (RET) in a leadless ultra-small DFN1006B-3 (SOT883B) SMD plastic package. NPN complementary type: PDTC143ZMB.
Funkcje
Tłumaczenie AI
- Output current capability up to 100 mA
- Reduced component count
- Built-in bias resistors
- Lower placement cost
- Simplified circuit design
- AEC-Q101 qualified
- Leadless ultra-compact SMD plastic package
- Package height as low as 0.37 mm
Zastosowania
Tłumaczenie AI
- Low-current peripheral driver
- IC input control
- General-purpose transistor replacement in digital applications
- Mobile applications
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.0146 | $ 0.01 |
| 10+ | $ 0.0117 | $ 0.12 |
| 30+ | $ 0.0101 | $ 0.30 |
| 100+ | $ 0.0092 | $ 0.92 |
| 500+ | $ 0.0083 | $ 4.15 |
| 1,000+ | $ 0.0079 | $ 7.90 |
Standardowa Obudowa10000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 180MHz | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 5V | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 12 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Collector - Emitter Voltage VCEO | 50V | |
| Transition frequency(fT) | 180MHz | |
| DC Current Gain | 100 | |
| Emitter-Base Voltage VEBO | 5V | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Current - Collector(Ic) | - |
| Typ | Opis | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 6.1kΩ | |
| Resistor Ratio | 12 | |
| Pd - Power Dissipation | 250mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | -65℃~+150℃ | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
PNP resistor-equipped transistor (RET) in a leadless ultra-small DFN1006B-3 (SOT883B) SMD plastic package. NPN complementary type: PDTC143ZMB.
Funkcje
Tłumaczenie AI
- Output current capability up to 100 mA
- Reduced component count
- Built-in bias resistors
- Lower placement cost
- Simplified circuit design
- AEC-Q101 qualified
- Leadless ultra-compact SMD plastic package
- Package height as low as 0.37 mm
Zastosowania
Tłumaczenie AI
- Low-current peripheral driver
- IC input control
- General-purpose transistor replacement in digital applications
- Mobile applications
C552101 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

