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EDA-ModelleEasyEDA
HXY MOSFET SI4427BDY-T1-GE3-HXY
| Hersteller | HXY MOSFETAsian Brands |
| Herst.-Teilenr. | SI4427BDY-T1-GE3-HXY |
| LCSC-Nr. | C54582669 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | 30V 15A 1.6V 25.6W 7.5mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs |
| Datenblatt | HXY MOSFET SI4427BDY-T1-GE3-HXY |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOP-8 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 15A | |
| Output Capacitance(Coss) | 400pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 25.6W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOP-8 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 15A | |
| Output Capacitance(Coss) | 400pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 25.6W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The SI4427BDY-T1-GE3 employs advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Merkmale
KI-Übersetzung
- VDS = -30V, ID = -15A
- RDS(ON) < 10mΩ (@ VGS = -10V)
Anwendungen
KI-Übersetzung
- Battery protection
- Load switch
- Uninterruptible power supply
Vorrätig: 45
45 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.1088$ 1.0534 | $ 1.05 |
| 10+ | $ 0.9335$ 0.8869 | $ 8.87 |
| 30+ | $ 0.8377$ 0.7959 | $ 23.88 |
| 100+ | $ 0.7289$ 0.6925 | $ 69.25 |
| 500+ | $ 0.6802$ 0.6462 | $ 323.10 |
| 1,000+ | $ 0.6575$ 0.6247 | $ 624.70 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOP-8 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 15A | |
| Output Capacitance(Coss) | 400pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 25.6W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOP-8 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 15A | |
| Output Capacitance(Coss) | 400pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 25.6W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.36nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The SI4427BDY-T1-GE3 employs advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Merkmale
KI-Übersetzung
- VDS = -30V, ID = -15A
- RDS(ON) < 10mΩ (@ VGS = -10V)
Anwendungen
KI-Übersetzung
- Battery protection
- Load switch
- Uninterruptible power supply
C54582669 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SQ4483EY-T1_GE3-HXY | HXY MOSFET | SOP-8 | 48 | $1.0032 $1.056 | ||
| SQ4483EY-T1_BE3-HXY | HXY MOSFET | SOP-8 | 48 | $1.2996 $1.368 | ||
| SI4461DY-T1-GE3-HXY | HXY MOSFET | SOP-8 | 48 | $1.5805 $1.6636 | ||
| DMP3018SSS-13-HXY | HXY MOSFET | SOP-8 | 38 | $0.3849 $0.4051 | ||
| SI4483ADY-T1-GE3-HXY | HXY MOSFET | SOP-8 | 24 | $0.8922 $0.9391 | ||
| IRF9321PBF-HXY | HXY MOSFET | SOP-8 | 495 | $0.2307 $0.2428 | ||
| IRF9388PBF-HXY | HXY MOSFET | SOP-8 | 100 | $0.2609 $0.2746 | ||
| FDS6673BZ-HXY | HXY MOSFET | SOP-8 | 50 | $0.3040 $0.32 | ||
| SI4427BDY-T1-E3-HXY | HXY MOSFET | SOP-8 | 35 | $0.2189 $0.2304 | ||
| DMG4413LSS-HXY | HXY MOSFET | SOP-8 | 0 | $0.3100 $0.3263 |