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Zdjęcia poglądowe
Modele EDAEasyEDA
MSKSEMI APM4953
| Producent | MSKSEMIAsian Brands |
| Nr części prod. | APM4953 |
| Nr LCSC | C5449078 |
| Opak. | SOP-8 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH ARR 30V 5.5A SOP-8 |
| Karta Katalogowa | MSKSEMI APM4953 |
| Części alternatywne | 3 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 40mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 560pF | |
| Gate Charge(Qg) | 5.1nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 40mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 560pF | |
| Gate Charge(Qg) | 5.1nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These dual P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Funkcje
Tłumaczenie AI
- -30V, -5.5A, RDS(ON) = 40mΩ (at VGS = -10V)
- Fast switching
- Green/eco-friendly devices available
- Suitable for -4.5V gate drive applications
Zastosowania
Tłumaczenie AI
- Laptop - Load Switch - Battery Protection - Handheld Instruments
Na stanie: 2,540
2,540 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.0839 | $ 0.84 |
| 100+ | $ 0.0682 | $ 6.82 |
| 300+ | $ 0.0604 | $ 18.12 |
| 3,000+ | $ 0.0502 | $ 150.60 |
| 6,000+ | $ 0.0455 | $ 273.00 |
| 9,000+ | $ 0.0431 | $ 387.90 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 40mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 560pF | |
| Gate Charge(Qg) | 5.1nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 40mΩ@10V;60mΩ@4.5V | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | 560pF | |
| Gate Charge(Qg) | 5.1nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These dual P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.
Funkcje
Tłumaczenie AI
- -30V, -5.5A, RDS(ON) = 40mΩ (at VGS = -10V)
- Fast switching
- Green/eco-friendly devices available
- Suitable for -4.5V gate drive applications
Zastosowania
Tłumaczenie AI
- Laptop - Load Switch - Battery Protection - Handheld Instruments
C5449078 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |