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Winsok Semicon WSD60P06DN56
| Produttore | Winsok SemiconAsian Brands |
| Cod. Prod. | WSD60P06DN56 |
| Cod. LCSC | C5444512 |
| Imballo | DFN5x6-8L |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 60V 60A DFN5x6-8L |
| Scheda Tecnica | Winsok Semicon WSD60P06DN56 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 265pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 265pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
The WSD60P06DN56 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDsON and gate charge for most of the synchronous buck converter applications. TheWSD60P06DN56 meet theRoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Caratteristiche
Traduzione AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDeviceAvailable
Applicazioni
Traduzione AI
- Power Management
- Load Switch
Disponibile: 71
71 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.6428$ 0.5786 | $ 0.58 |
| 10+ | $ 0.524$ 0.4716 | $ 4.72 |
| 30+ | $ 0.4719$ 0.4248 | $ 12.74 |
| 100+ | $ 0.4085$ 0.3677 | $ 36.77 |
| 500+ | $ 0.358$ 0.3222 | $ 161.10 |
| 1,000+ | $ 0.3401$ 0.3061 | $ 306.10 |
Package Standard5000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 265pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Winsok Semicon | |
| Imballo | DFN5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 265pF | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.3nF | |
| Gate Charge(Qg) | 72nC@10V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The WSD60P06DN56 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDsON and gate charge for most of the synchronous buck converter applications. TheWSD60P06DN56 meet theRoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Caratteristiche
Traduzione AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDeviceAvailable
Applicazioni
Traduzione AI
- Power Management
- Load Switch
C5444512 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| WSD86P10DN56 | Winsok Semicon | DFN5X6-8L | 1,413 | $ 2.3848 | ||
| WSD90P06DN56 | Winsok Semicon | DFN-8(5x6) | 11,307 | $ 1.4128 |