Infineon IPI90R1K2C3
| Hersteller | |
| Herst.-Teilenr. | IPI90R1K2C3 |
| LCSC-Nr. | C537011 |
| Verp. | TO-262-3 |
| Kundennummer | |
| Hauptmerkm. | 83W 900V 5.1A 3V 1.2Ω@10V 1 N-channel N-Channel TO-262-3 Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon IPI90R1K2C3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-262-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-262-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 5.1A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS P7 is an optimized platform tailored for cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series combines all the advantages of fast-switching SJ MOSFETs with an excellent cost-performance ratio and best-in-class ease of use. The technology meets the highest efficiency standards, supports high power density, and enables customers to achieve ultra-slim designs.
Merkmale
- Minimum figure of merit RON x Qg
- Very high dv/dt rating
- High peak current capability
- JEDEC qualified for target applications
- Lead-free lead finish; RoHS compliant
- Ultra-low gate charge
Anwendungen
- Quasi-resonant flyback/forward topology
- PC silver box and consumer applications
- Industrial SMPS
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.5159 | $ 2.52 |
| 200+ | $ 0.974 | $ 194.80 |
| 500+ | $ 0.94 | $ 470.00 |
| 1,000+ | $ 0.923 | $ 923.00 |
Standardgehäuse500/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-262-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-262-3 | |
| Output Capacitance(Coss) | 35pF | |
| Pd - Power Dissipation | 83W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 5.1A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 710pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS P7 is an optimized platform tailored for cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series combines all the advantages of fast-switching SJ MOSFETs with an excellent cost-performance ratio and best-in-class ease of use. The technology meets the highest efficiency standards, supports high power density, and enables customers to achieve ultra-slim designs.
Merkmale
- Minimum figure of merit RON x Qg
- Very high dv/dt rating
- High peak current capability
- JEDEC qualified for target applications
- Lead-free lead finish; RoHS compliant
- Ultra-low gate charge
Anwendungen
- Quasi-resonant flyback/forward topology
- PC silver box and consumer applications
- Industrial SMPS
C537011 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IPI90R1K0C3 | Infineon | TO-262-3 | 0 | $ 1.0061 | ||
| IPI90R500C3 | Infineon | TO-262-3 | 0 | $ 3.8193 | ||
| STI6N90K5 | ST | I2PAK | 0 | $ 1.5554 | ||
| IPI90R340C3 | Infineon | TO-262-3 | 0 | $ 6.3065 |