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AGMSEMI AGM30P16AP
| Produttore | AGMSEMIAsian Brands |
| Cod. Prod. | AGM30P16AP |
| Cod. LCSC | C5349204 |
| Imballo | PDFN-8(3.3x3.3) |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 30V 21A PDFN-8(3.3x3.3) |
| Scheda Tecnica | AGMSEMI AGM30P16AP |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 9 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 194pF | |
| Current - Continuous Drain(Id) | 21A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 14nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 194pF | |
| Current - Continuous Drain(Id) | 21A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 14nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
AGM30P16AP combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is well-suited for load switch and battery protection applications.
Caratteristiche
Traduzione AI
- Advanced high cell density trench technology
- Low R<sub>DS(ON)</sub> minimizes conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applicazioni
Traduzione AI
- MB/VGA Vcore
- Switch-mode power supply (SMPS) secondary synchronous rectifier
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
Disponibile: 215
215 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.1686$ 0.1602 | $ 0.80 |
| 50+ | $ 0.139$ 0.1321 | $ 6.61 |
| 150+ | $ 0.1242$ 0.1180 | $ 17.70 |
| 500+ | $ 0.1131$ 0.1075 | $ 53.75 |
| 2,500+ | $ 0.086$ 0.0817 | $ 204.25 |
| 5,000+ | $ 0.0815$ 0.0775 | $ 387.50 |
Package Standard5000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 194pF | |
| Current - Continuous Drain(Id) | 21A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 14nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AGMSEMI | |
| Imballo | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 194pF | |
| Current - Continuous Drain(Id) | 21A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 14nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
AGM30P16AP combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is well-suited for load switch and battery protection applications.
Caratteristiche
Traduzione AI
- Advanced high cell density trench technology
- Low R<sub>DS(ON)</sub> minimizes conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applicazioni
Traduzione AI
- MB/VGA Vcore
- Switch-mode power supply (SMPS) secondary synchronous rectifier
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
C5349204 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| AGM40P35AP | AGMSEMI | PDFN3.3x3.3-8 | 825 | $ 0.2749 | ||
| AGM30P10AP | AGMSEMI | PDFN-8(3.3x3.3) | 1,050 | $0.1930 $0.2144 | ||
| AGM40P30AP | AGMSEMI | PDFN-8(3.3x3.3) | 3,805 | $ 0.1568 | ||
| AGM60P14AP | AGMSEMI | PDFN3.3x3.3-8 | 1,670 | $ 0.3798 | ||
| AGM40P55AP | AGMSEMI | PDFN-8(3.3x3.3) | 1,140 | $0.2946 $0.3202 | ||
| AGM60P30AP | AGMSEMI | PDFN-8(3.3x3.3) | 3,380 | $ 0.2091 | ||
| AGM40P25AP | AGMSEMI | PDFN3.3x3.3-8 | 45 | $ 0.1838 | ||
| AGM30P05AP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.2414 | ||
| AGM30P08AP | AGMSEMI | PDFN-8(3.3x3.3) | 0 | $ 0.2069 |