HXY MOSFET GP3D010A065D-HXY
| Produttore | HXY MOSFETAsian Brands |
| Cod. Prod. | GP3D010A065D-HXY |
| Cod. LCSC | C53468041 |
| Imballo | TO-263 |
| Numero Cliente | |
| Attr. chiave | 1 Independent 650V 1.3V@10A 10A TO-263 Single Diodes |
| Scheda Tecnica | HXY MOSFET GP3D010A065D-HXY |
| Parti alternative | 18 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | TO-263 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | TO-263 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
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Descrizione
Traduzione AI
This product series delivers state-of-the-art performance. It is designed for high-frequency applications requiring high efficiency and reliability.
Caratteristiche
Traduzione AI
- Low conduction loss due to low VF
- Ultra-low switching loss due to minimal QC
- High durability with superior surge current capability
- Industrial-standard quality and reliability
Applicazioni
Traduzione AI
- Uninterruptible Power Supply (UPS)
- Power Inverters
- High-Performance Switched-Mode Power Supplies (SMPS)
- Power Factor Correction
Disponibile: 23
23 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 2.2806$ 1.8245 | $ 1.82 |
| 10+ | $ 1.9389$ 1.5512 | $ 15.51 |
| 30+ | $ 1.7251$ 1.3801 | $ 41.40 |
| 100+ | $ 1.5064$ 1.2052 | $ 120.52 |
| 500+ | $ 1.4076$ 1.1261 | $ 563.05 |
| 800+ | $ 1.3639$ 1.0912 | $ 872.96 |
Package Standard800/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | TO-263 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | HXY MOSFET | |
| Imballo | TO-263 | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 50uA@650V | |
| Non-Repetitive Peak Forward Surge Current | 80A | |
| Current - Rectified | 10A |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This product series delivers state-of-the-art performance. It is designed for high-frequency applications requiring high efficiency and reliability.
Caratteristiche
Traduzione AI
- Low conduction loss due to low VF
- Ultra-low switching loss due to minimal QC
- High durability with superior surge current capability
- Industrial-standard quality and reliability
Applicazioni
Traduzione AI
- Uninterruptible Power Supply (UPS)
- Power Inverters
- High-Performance Switched-Mode Power Supplies (SMPS)
- Power Factor Correction
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| HFFSB1065B | HXY MOSFET | TO-263 | 78 | $1.5919 $1.8089 | ||
| CSD06060G-HXY | HXY MOSFET | TO-263 | 25 | $2.4465 $3.0581 | ||
| STTH10LCD06SG-TR-HXY | HXY MOSFET | TO-263 | 25 | $2.6914 $3.3642 | ||
| AIDK10S65C5ATMA1-HXY | HXY MOSFET | TO-263 | 24 | $2.3454 $2.9317 | ||
| PNE650100EJ-QJ-HXY | HXY MOSFET | TO-263 | 22 | $1.3689 $1.521 | ||
| IDK10G65C5XTMA1-HXY | HXY MOSFET | TO-263 | 17 | $2.3610 $2.9512 | ||
| HIDK10G65C5XTMA2 | HXY MOSFET | TO-263 | 11 | $1.8163 $1.9118 | ||
| HC6D10065G | HXY MOSFET | TO-263 | 4 | $1.5901 $1.8069 | ||
| HIDK12G65C5 | HXY MOSFET | TO-263 | 36 | $1.8181 $2.066 | ||
| AIDK12S65C5ATMA1-HXY | HXY MOSFET | TO-263 | 4 | $3.1812 $3.9765 | ||
| IDK06G65C5XTMA2-HXY | HXY MOSFET | TO-263 | 10 | $1.3567 $1.5961 | ||
| SICB0860P-HXY | HXY MOSFET | TO-263 | 24 | $1.2769 $1.5961 | ||
| LSIC2SD065D08A-HXY | HXY MOSFET | TO-263 | 24 | $1.5320 $1.915 | ||
| LSIC2SD120D15-HXY | HXY MOSFET | TO-263 | 3 | $3.3618 $3.955 | ||
| S3D10065G-HXY | HXY MOSFET | TO-263 | 23 | $1.2290 $1.3655 | ||
| HFFSB10120AF085 | HXY MOSFET | TO-263 | 104 | $4.6212 $4.8644 | ||
| HC1D15065G | HXY MOSFET | TO-263 | 68 | $2.9043 $3.0571 | ||
| HC1D20065G | HXY MOSFET | TO-263 | 139 | $3.8214 $4.109 |



