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ElecSuper ESN4186
| Produttore | ElecSuperAsian Brands |
| Cod. Prod. | ESN4186 |
| Cod. LCSC | C5334069 |
| Imballo | PDFN3x3-8L |
| Numero Cliente | |
| Attr. chiave | 45V 28A 1.8V 25W 16mΩ@10V 1 N-channel PDFN3x3-8L Single FETs, MOSFETs |
| Scheda Tecnica | ElecSuper ESN4186 |
| Parti alternative | 4 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | PDFN3x3-8L | |
| Drain to Source Voltage | 45V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 980pF | |
| Gate Charge(Qg) | 17nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | PDFN3x3-8L | |
| Drain to Source Voltage | 45V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 980pF | |
| Gate Charge(Qg) | 17nC@10V |
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Descrizione
Traduzione AI
ESN4186 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN4186 is lead-free.
Caratteristiche
Traduzione AI
- 45V, RDS(ON) = 16 mΩ (typical), VGS = 10V
- RDS(ON) = 21 mΩ (typical), VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche rated
- Low leakage current
Applicazioni
Traduzione AI
- PWM applications
- Load switching
- Power management for portable/desktop computers
- DC/DC conversion
Esaurito
Avvisami
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 5+ | $ 0.1583 | $ 0.79 |
| 50+ | $ 0.1182 | $ 5.91 |
| 150+ | $ 0.1011 | $ 15.17 |
| 500+ | $ 0.0796 | $ 39.80 |
Package Standard5000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | PDFN3x3-8L | |
| Drain to Source Voltage | 45V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 980pF | |
| Gate Charge(Qg) | 17nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ElecSuper | |
| Imballo | PDFN3x3-8L | |
| Drain to Source Voltage | 45V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 28A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| RDS(on) | 16mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 980pF | |
| Gate Charge(Qg) | 17nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
ESN4186 is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product ESN4186 is lead-free.
Caratteristiche
Traduzione AI
- 45V, RDS(ON) = 16 mΩ (typical), VGS = 10V
- RDS(ON) = 21 mΩ (typical), VGS = 4.5V
- Trench MOSFET technology
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche rated
- Low leakage current
Applicazioni
Traduzione AI
- PWM applications
- Load switching
- Power management for portable/desktop computers
- DC/DC conversion
C5334069 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| CSD19537Q3(ES) | ElecSuper | PDFN-8L(3x3) | 4,783 | $ 0.7459 | ||
| CSD18543Q3A(ES) | ElecSuper | PDFN-8L(3x3) | 940 | $ 0.3158 | ||
| AON7264E(ES) | ElecSuper | PDFN3x3-8L | 115 | $ 0.2298 | ||
| ESGNH10R17 | ElecSuper | PDFN-8L(3x3) | 0 | $ 0.2734 |