TOSHIBA RN2405,LXGF
| Produttore | |
| Cod. Prod. | RN2405,LXGF |
| Cod. LCSC | C5331526 |
| Imballo | - |
| Numero Cliente | |
| Attr. chiave | 50V 80 100mA 1 PNP Pre-Biased PNP Single, Pre-Biased Bipolar Transistors |
| Scheda Tecnica | TOSHIBA RN2405,LXGF |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | TOSHIBA | |
| Imballo | - | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.05 | |
| Pd - Power Dissipation | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | TOSHIBA | |
| Imballo | - | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.05 | |
| Pd - Power Dissipation | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- AEC-Q101 qualified
- The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
- Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
- Complementary to RN1401 to RN1406
Applicazioni
Traduzione AI
- Switching
- Inverter Circuits
- Interfacing Driver Circuits
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.2229 | $ 0.22 |
| 10+ | $ 0.1762 | $ 1.76 |
| 30+ | $ 0.1562 | $ 4.69 |
| 100+ | $ 0.1313 | $ 13.13 |
| 500+ | $ 0.1202 | $ 60.10 |
| 1,000+ | $ 0.1135 | $ 113.50 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | TOSHIBA | |
| Imballo | - | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.05 | |
| Pd - Power Dissipation | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Produttore | TOSHIBA | |
| Imballo | - | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 100mA |
| Tipo | Descrizione | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 0.05 | |
| Pd - Power Dissipation | - | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,0.2V | |
| Operating temperature | - | |
| Number | 1 PNP Pre-Biased | |
| type | PNP |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- AEC-Q101 qualified
- The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
- Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
- Complementary to RN1401 to RN1406
Applicazioni
Traduzione AI
- Switching
- Inverter Circuits
- Interfacing Driver Circuits
C5331526 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

