10% OFF
- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
HXY MOSFET IXFP34N65X2M-HXY
| Hersteller | HXY MOSFETAsian Brands |
| Herst.-Teilenr. | IXFP34N65X2M-HXY |
| LCSC-Nr. | C53134159 |
| Verp. | TO-220F |
| Kundennummer | |
| Hauptmerkm. | 650V 24A 3V 64W 95mΩ@18V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs |
| Datenblatt | HXY MOSFET IXFP34N65X2M-HXY |
| Alternativteile | 7 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 77pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 64W | |
| RDS(on) | 95mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 803pF | |
| Gate Charge(Qg) | 34nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 77pF | |
| Current - Continuous Drain(Id) | 24A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 64W | |
| RDS(on) | 95mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 803pF | |
| Gate Charge(Qg) | 34nC | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Wide bandgap SiC MOSFET technology
- Low on-resistance and high blocking voltage
- Low capacitance and high-speed switching
- Low reverse recovery charge
- Halogen-free and RoHS compliant
Anwendungen
KI-Übersetzung
- Switch-mode power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
Vorrätig: 9
9 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.9955$ 2.6960 | $ 2.70 |
| 10+ | $ 2.5703$ 2.3133 | $ 23.13 |
| 50+ | $ 2.318$ 2.0862 | $ 104.31 |
| 100+ | $ 2.0626$ 1.8564 | $ 185.64 |
| 500+ | $ 1.9452$ 1.7507 | $ 875.35 |
| 1,000+ | $ 1.8912$ 1.7021 | $ 1702.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 77pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 64W | |
| RDS(on) | 95mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 803pF | |
| Gate Charge(Qg) | 34nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 77pF | |
| Current - Continuous Drain(Id) | 24A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 64W | |
| RDS(on) | 95mΩ@18V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 803pF | |
| Gate Charge(Qg) | 34nC | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Wide bandgap SiC MOSFET technology
- Low on-resistance and high blocking voltage
- Low capacitance and high-speed switching
- Low reverse recovery charge
- Halogen-free and RoHS compliant
Anwendungen
KI-Übersetzung
- Switch-mode power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NTPF095N65S3H-HXY | HXY MOSFET | TO-220F | 14 | $2.6960 $2.9955 | ||
| FCPF099N65S3-HXY | HXY MOSFET | TO-220F | 5 | $3.5945 $4.4931 | ||
| NTPF125N65S3H-HXY | HXY MOSFET | TO-220F | 40 | $1.5825 $1.9781 | ||
| FCPF150N65F-HXY | HXY MOSFET | TO-220F | 9 | $1.5320 $1.915 | ||
| IPA65R150CFDXKSA2-HXY | HXY MOSFET | TO-220F | 4 | $2.2974 $2.8717 | ||
| STF30N65M5-HXY | HXY MOSFET | TO-220F | 0 | $ 2.8873 | ||
| SIHA24N80AE-GE3-HXY | HXY MOSFET | TO-220F | 0 | $ 3.0304 |