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HXY MOSFET NTPF190N65S3HF-HXY
| Produttore | HXY MOSFETAsian Brands |
| Cod. Prod. | NTPF190N65S3HF-HXY |
| Cod. LCSC | C53134101 |
| Imballo | TO-220F |
| Numero Cliente | |
| Attr. chiave | 800V 11A 3V 40W 165mΩ@18V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs |
| Scheda Tecnica | HXY MOSFET NTPF190N65S3HF-HXY |
| Parti alternative | 8 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 165mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 361pF | |
| Gate Charge(Qg) | 17.6nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Current - Continuous Drain(Id) | 11A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 165mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 361pF | |
| Gate Charge(Qg) | 17.6nC | |
| Type | N-Channel |
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Descrizione
Traduzione AI
This product utilizes wide-bandgap SiC MOSFET technology, featuring low on-resistance at high blocking voltages, low capacitance for high-speed switching, and low reverse recovery charge. These characteristics help reduce switching losses, improve system switching frequency and power density, and lower thermal management requirements. The product also complies with halogen-free and RoHS environmental standards.
Caratteristiche
Traduzione AI
- Wide bandgap SiC MOSFET technology
- Low on-resistance at high blocking voltage
- Low capacitance at high-speed switching
- Low reverse recovery charge
- Halogen-free and RoHS compliant
Applicazioni
Traduzione AI
- Switch-mode power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.6243$ 1.4619 | $ 1.46 |
| 10+ | $ 1.3786$ 1.2408 | $ 12.41 |
| 50+ | $ 1.2256$ 1.1031 | $ 55.16 |
| 100+ | $ 1.0693$ 0.9624 | $ 96.24 |
| 500+ | $ 0.9977$ 0.8980 | $ 449.00 |
| 1,000+ | $ 0.9668$ 0.8702 | $ 870.20 |
Package Standard50/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 165mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 361pF | |
| Gate Charge(Qg) | 17.6nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | TO-220F | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 34pF | |
| Current - Continuous Drain(Id) | 11A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF | |
| RDS(on) | 165mΩ@18V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 361pF | |
| Gate Charge(Qg) | 17.6nC | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This product utilizes wide-bandgap SiC MOSFET technology, featuring low on-resistance at high blocking voltages, low capacitance for high-speed switching, and low reverse recovery charge. These characteristics help reduce switching losses, improve system switching frequency and power density, and lower thermal management requirements. The product also complies with halogen-free and RoHS environmental standards.
Caratteristiche
Traduzione AI
- Wide bandgap SiC MOSFET technology
- Low on-resistance at high blocking voltage
- Low capacitance at high-speed switching
- Low reverse recovery charge
- Halogen-free and RoHS compliant
Applicazioni
Traduzione AI
- Switch-mode power supplies
- Renewable energy
- On-board chargers
- High-voltage DC/DC converters
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MCPF180N65SH-BP-HXY | HXY MOSFET | TO-220F | 9 | $1.6590 $2.0737 | ||
| STF21N65M5-HXY | HXY MOSFET | TO-220F | 9 | $1.4458 $1.6064 | ||
| STF24NM65N-HXY | HXY MOSFET | TO-220F | 9 | $1.4256 $1.5006 | ||
| STF26N65DM2-HXY | HXY MOSFET | TO-220F | 9 | $1.4365 $1.5961 | ||
| STF28N65M2-HXY | HXY MOSFET | TO-220F | 9 | $1.4458 $1.6064 | ||
| STFU28N65M2-HXY | HXY MOSFET | TO-220F | 8 | $2.0423 $2.5528 | ||
| IPA65R190C7XKSA1-HXY | HXY MOSFET | TO-220F | 6 | $1.7872 $2.2339 | ||
| SIHA24N80AE-GE3-HXY | HXY MOSFET | TO-220F | 0 | $ 3.0304 |