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EDA-ModelleEasyEDA
JSCJ SBDF20150TA
| Hersteller | JSCJAsian Brands |
| Herst.-Teilenr. | SBDF20150TA |
| LCSC-Nr. | C5295529 |
| Verp. | TO-220F |
| Kundennummer | |
| Hauptmerkm. | DIODE SCHOTTKY 150V TO-220F |
| Datenblatt | JSCJ SBDF20150TA |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | TO-220F | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 30uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 200A | |
| Current - Rectified | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | TO-220F | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 30uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 200A | |
| Current - Rectified | 20A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low power consumption, high efficiency
- Guard ring chip structure for transient protection
- High current capability and low forward voltage drop
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.5427 | $ 0.54 |
| 10+ | $ 0.4533 | $ 4.53 |
| 50+ | $ 0.4143 | $ 20.72 |
| 100+ | $ 0.3656 | $ 36.56 |
| 500+ | $ 0.3445 | $ 172.25 |
| 1,000+ | $ 0.3315 | $ 331.50 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | TO-220F | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 30uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 200A | |
| Current - Rectified | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | JSCJ | |
| Verp. | TO-220F | |
| Diode Configuration | 1 Independent | |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - Forward(Vf@If) | 1.3V@10A | |
| Reverse Leakage Current (Ir) | 30uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 200A | |
| Current - Rectified | 20A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low power consumption, high efficiency
- Guard ring chip structure for transient protection
- High current capability and low forward voltage drop
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SBDF30H300A | JSCJ | TO-220F | 20 | $ 0.6474 | ||
| SBDF30150TA | JSCJ | TO-220F | 0 | $ 0.6694 |