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ST SCTWA40N12G24AG
| Hersteller | |
| Herst.-Teilenr. | SCTWA40N12G24AG |
| LCSC-Nr. | C5268797 |
| Verp. | HiP247-4 |
| Kundennummer | |
| Hauptmerkm. | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247-4 package |
| Datenblatt | ST SCTWA40N12G24AG |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | HiP247-4 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | HiP247-4 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 ℃)
- Source sensing pin for increased efficiency
Anwendungen
KI-Übersetzung
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Vorrätig: 3
3 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 24.8427 | $ 24.84 |
| 10+ | $ 24.094 | $ 240.94 |
Standardgehäuse1/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | HiP247-4 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | HiP247-4 | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.23nF | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 ℃)
- Source sensing pin for increased efficiency
Anwendungen
KI-Übersetzung
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IMYH200R075M1HXKSA1 | Infineon | TO-247-4 | 11 | $ 20.5496 | ||
| IMZC120R026M2HXKSA1 | Infineon | TO-247-4 | 7 | $ 18.7735 | ||
| AIMZH120R040M1TXKSA1 | Infineon | TO-247-4 | 5 | $ 14.9814 | ||
| IMZA120R030M1HXKSA1 | Infineon | TO-247-4 | 10 | $ 19.0234 | ||
| NVH4L070N120M3S | onsemi | TO-247-4L | 4 | $11.6134 $15.4845 | ||
| ADQ120N080G2 | ANHI | TO-247-4L | 64 | $ 10.0358 | ||
| IMZA120R026M2HXKSA1 | Infineon | TO-247-4 | 0 | $ 16.4063 | ||
| AIMZHN120R040M1TXKSA1 | Infineon | TO-247-4 | 0 | $ 11.0853 | ||
| IMZC120R040M2HXKSA1 | Infineon | TO-247-4 | 0 | $ 8.8744 | ||
| LGE3M40120Q | LGE | TO-247-4 | 0 | $ 5.7227 |