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EDA-ModelleEasyEDA
DIODES DMP3011SSS-13
| Hersteller | |
| Herst.-Teilenr. | DMP3011SSS-13 |
| LCSC-Nr. | C5245376 |
| Verp. | SO-8 |
| Kundennummer | |
| Hauptmerkm. | 30V 11A 3V 1.8W 10mΩ@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS |
| Datenblatt | DIODES DMP3011SSS-13 |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 296pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 46nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 296pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 46nC@10V |
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Beschreibung
KI-Übersetzung
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low RDS(ON) — minimizes conduction losses
- Compact, thermally efficient package for higher-density end products
- Occupies only 33% of SO-8 PCB footprint, enabling smaller end products
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
- JEDEC-qualified (as referenced in AEC-Q) for high reliability
Anwendungen
KI-Übersetzung
- Backlight illumination - Power management functions - DC-DC converter
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.9624 | $ 0.96 |
| 200+ | $ 0.3735 | $ 74.70 |
| 500+ | $ 0.3596 | $ 179.80 |
| 1,000+ | $ 0.3534 | $ 353.40 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 296pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 46nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 296pF | |
| RDS(on) | 10mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.38nF | |
| Gate Charge(Qg) | 46nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low RDS(ON) — minimizes conduction losses
- Compact, thermally efficient package for higher-density end products
- Occupies only 33% of SO-8 PCB footprint, enabling smaller end products
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
- JEDEC-qualified (as referenced in AEC-Q) for high reliability
Anwendungen
KI-Übersetzung
- Backlight illumination - Power management functions - DC-DC converter
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| AO4407AL | AOS | SOIC-8 | 40 | $ 0.3333 | ||
| AP4407 | ALLPOWER | SOIC-8 | 830 | $ 0.249 | ||
| SM4305PSKC-TRG-VB | VBsemi Elec | SO-8 | 1,090 | $0.3597 $0.4231 | ||
| SI4441EY-T1-E3-VB | VBsemi Elec | SO-8 | 80 | $0.4050 $0.4764 | ||
| IRF9332TRPBF-VB | VBsemi Elec | SO-8 | 45 | $0.5261 $0.5537 | ||
| SI4427BDY-T1-E3-VB | VBsemi Elec | SO-8 | 3 | $0.4953 $0.5826 | ||
| YJS4407C | YANGJIE | SOP-8 | 1,440 | $ 0.2338 | ||
| SL4407A | Slkor | SOP-8 | 2,880 | $0.1317 $0.1386 | ||
| BR4407 | BLUE ROCKET | SOP-8 | 0 | $ 0.1564 | ||
| FDS6675A | onsemi | SOIC-8 | 0 | $ 0.6743 |