5% OFF
- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
Cmos CMF60R180S6ZD
| Produttore | CmosAsian Brands |
| Cod. Prod. | CMF60R180S6ZD |
| Cod. LCSC | C52118372 |
| Imballo | TO-220F |
| Numero Cliente | |
| Attr. chiave | 600V 20A 4.5V 40W 180mΩ 1 N-channel N-Channel TO-220F Single FETs, MOSFETs |
| Scheda Tecnica | Cmos CMF60R180S6ZD |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Cmos | |
| Imballo | TO-220F | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 180mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 32.5nC | |
| Vgs | ±25V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Cmos | |
| Imballo | TO-220F | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 180mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 32.5nC | |
| Vgs | ±25V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
60R180S6ZD is a power MOSFET utilizing Cmos advanced super-junction technology, achieving ultra-low on-resistance and gate charge while reducing ringing tendency. As a result, it exhibits extremely low switching losses, making it well-suited for switching applications. Furthermore, these user-friendly devices integrate a Zener diode for enhanced ruggedness and excellent ESD capability, making them an ideal choice for designers.
Caratteristiche
Traduzione AI
- Multi-layer epitaxial chip technology
- Low on-resistance
- 100% avalanche tested
- RoHS compliant
Applicazioni
Traduzione AI
- Adapter
- PFC power stage
- DC-DC converter
Disponibile: 149
149 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.0089$ 0.9585 | $ 0.96 |
| 10+ | $ 0.8332$ 0.7916 | $ 7.92 |
| 50+ | $ 0.7469$ 0.7096 | $ 35.48 |
| 100+ | $ 0.6591$ 0.6262 | $ 62.62 |
| 500+ | $ 0.607$ 0.5767 | $ 288.35 |
| 1,000+ | $ 0.581$ 0.5520 | $ 552.00 |
Package Standard50/Full Tube | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Cmos | |
| Imballo | TO-220F | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 180mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 32.5nC | |
| Vgs | ±25V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Cmos | |
| Imballo | TO-220F | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 180pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 180mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 32.5nC | |
| Vgs | ±25V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
60R180S6ZD is a power MOSFET utilizing Cmos advanced super-junction technology, achieving ultra-low on-resistance and gate charge while reducing ringing tendency. As a result, it exhibits extremely low switching losses, making it well-suited for switching applications. Furthermore, these user-friendly devices integrate a Zener diode for enhanced ruggedness and excellent ESD capability, making them an ideal choice for designers.
Caratteristiche
Traduzione AI
- Multi-layer epitaxial chip technology
- Low on-resistance
- 100% avalanche tested
- RoHS compliant
Applicazioni
Traduzione AI
- Adapter
- PFC power stage
- DC-DC converter
C52118372 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| CMF65R190SD | Cmos | TO-220F | 50 | $1.2254 $1.2898 | ||
| CMF65R160SD | Cmos | TO-220F | 76 | $1.2113 $1.275 | ||
| CMF65R190 | Cmos | TO-220F | 190 | $1.1678 $1.2292 | ||
| CMF65R105 | Cmos | TO-220F | 47 | $1.9587 $2.0617 | ||
| CMF20N65 | Cmos | TO-220F | 157 | $0.8095 $0.8521 | ||
| CMF60R078 | Cmos | TO-220F | 9 | $ 2.2813 | ||
| CMF65R140 | Cmos | TO-220F | 85 | $1.1794 $1.2414 | ||
| CMF65R090DT | Cmos | TO-220F | 175 | $1.5990 $1.6831 | ||
| CMF20N60 | Cmos | TO-220F | 1 | $0.6975 $0.7342 | ||
| CMF20N65A | Cmos | TO-220F | 100 | $0.6942 $0.7307 |