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EDA-ModelleEasyEDA
NCE NCEP050N85D
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCEP050N85D |
| LCSC-Nr. | C503054 |
| Verp. | TO-263 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 85V 120A TO-263 |
| Datenblatt | NCE NCEP050N85D |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 70nC@40V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 70nC@40V |
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Beschreibung
KI-Übersetzung
This series of devices employs Super Trench II technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes both conduction and switching power losses. These devices are ideal for high-frequency switching and synchronous rectification.
Merkmale
KI-Übersetzung
- VDS = 85V, ID = 120A
- RDS(ON) = 4.7mΩ, typical (TO-220), @ VGS = 10V
- RDS(ON) = 4.5mΩ, typical (TO-263), @ VGS = 10V
- Excellent gate charge × RDS(on) product (figure of merit, FOM)
- Ultra-low on-resistance RDS(on)
- 175°C operating temperature
- Lead-free lead finish
- 100% tested for single-pulse avalanche energy (UIS)!
- 100% tested for ΔVds!
Anwendungen
KI-Übersetzung
- DC-DC converter
- Ideal for high-frequency switching and synchronous rectification
Vorrätig: 7
7 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.9381 | $ 0.94 |
| 10+ | $ 0.7419 | $ 7.42 |
| 30+ | $ 0.6429 | $ 19.29 |
| 100+ | $ 0.5456 | $ 54.56 |
| 500+ | $ 0.4869 | $ 243.45 |
| 800+ | $ 0.4559 | $ 364.72 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 70nC@40V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 85V | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 160W | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.9nF | |
| Gate Charge(Qg) | 70nC@40V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of devices employs Super Trench II technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes both conduction and switching power losses. These devices are ideal for high-frequency switching and synchronous rectification.
Merkmale
KI-Übersetzung
- VDS = 85V, ID = 120A
- RDS(ON) = 4.7mΩ, typical (TO-220), @ VGS = 10V
- RDS(ON) = 4.5mΩ, typical (TO-263), @ VGS = 10V
- Excellent gate charge × RDS(on) product (figure of merit, FOM)
- Ultra-low on-resistance RDS(on)
- 175°C operating temperature
- Lead-free lead finish
- 100% tested for single-pulse avalanche energy (UIS)!
- 100% tested for ΔVds!
Anwendungen
KI-Übersetzung
- DC-DC converter
- Ideal for high-frequency switching and synchronous rectification
C503054 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| NCEP039N10D | NCE | TO-263 | 1,220 | $ 1.3111 | ||
| NCEP040N85D | NCE | TO-263 | 1 | $ 0.8269 | ||
| NCEP12T12D | NCE | TO-263-2L | 1 | $ 1.068 | ||
| NCEP050N12D | NCE | TO-263 | 7 | $ 1.1907 | ||
| NCEP033N85D | NCE | TO-263 | 7 | $ 1.6767 | ||
| NCEP033N10D | NCE | TO-263 | 19 | $ 1.8684 | ||
| NCEP045N10D | NCE | TO-263 | 0 | $ 1.1795 | ||
| NCEP85T14D | NCE | TO-263-2L | 0 | $ 0.8778 | ||
| NCEP040N10D | NCE | TO-263-2L | 0 | $ 1.21 | ||
| NCEP040N12D | NCE | TO-263 | 0 | $ 2.3099 |