Jiangsu JieJie Microelectronics JMTG060P03A
| Hersteller | Jiangsu JieJie MicroelectronicsAsian Brands |
| Herst.-Teilenr. | JMTG060P03A |
| LCSC-Nr. | C49024277 |
| Verp. | PDFN-8L(5x6) |
| Kundennummer | |
| Hauptmerkm. | 104W 30V 111A 1.8V 3.8mΩ@10V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs |
| Datenblatt | Jiangsu JieJie Microelectronics JMTG060P03A |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Jiangsu JieJie Microelectronics | |
| Verp. | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 687pF | |
| Pd - Power Dissipation | 104W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 111A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| RDS(on) | 3.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.609nF | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Jiangsu JieJie Microelectronics | |
| Verp. | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 687pF | |
| Pd - Power Dissipation | 104W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 111A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| RDS(on) | 3.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.609nF | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Excellent on-resistance and low gate charge
- 100% tested for unclamped inductive switching
- 100% tested for drain-source voltage variation
- Halogen-free; RoHS compliant
Anwendungen
KI-Übersetzung
- Load switch
- PWM applications
- Power management
Vorrätig: 4,625
4,625 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.3378 | $ 1.69 |
| 50+ | $ 0.2676 | $ 13.38 |
| 150+ | $ 0.2375 | $ 35.63 |
| 500+ | $ 0.2 | $ 100.00 |
| 2,500+ | $ 0.1832 | $ 458.00 |
| 5,000+ | $ 0.1732 | $ 866.00 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Jiangsu JieJie Microelectronics | |
| Verp. | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 687pF | |
| Pd - Power Dissipation | 104W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 111A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| RDS(on) | 3.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.609nF | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Jiangsu JieJie Microelectronics | |
| Verp. | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 687pF | |
| Pd - Power Dissipation | 104W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 111A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| RDS(on) | 3.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 575pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 6.609nF | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Excellent on-resistance and low gate charge
- 100% tested for unclamped inductive switching
- 100% tested for drain-source voltage variation
- Halogen-free; RoHS compliant
Anwendungen
KI-Übersetzung
- Load switch
- PWM applications
- Power management
C49024277 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

