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EDA-ModelleEasyEDA
WPMtek WTM20N65VF
| Hersteller | WPMtekAsian Brands |
| Herst.-Teilenr. | WTM20N65VF |
| LCSC-Nr. | C48642352 |
| Verp. | TO-220F |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 20A TO-220F |
| Datenblatt | WPMtek WTM20N65VF |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 252pF | |
| Pd - Power Dissipation | 113.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF | |
| RDS(on) | 470mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.764nF | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 252pF | |
| Pd - Power Dissipation | 113.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF | |
| RDS(on) | 470mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.764nF | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This power MOSFET is manufactured using advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.
Merkmale
KI-Übersetzung
- 20A, 670V, R DS(on) = 350mΩ at V GS = 10V
- Low gate charge (typical 40nC)
- Low C rss (typical 5.7pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Vorrätig: 8
8 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7505 | $ 0.75 |
| 10+ | $ 0.6092 | $ 6.09 |
| 50+ | $ 0.5393 | $ 26.97 |
| 100+ | $ 0.4695 | $ 46.95 |
| 500+ | $ 0.4289 | $ 214.45 |
| 1,000+ | $ 0.4061 | $ 406.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 252pF | |
| Pd - Power Dissipation | 113.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF | |
| RDS(on) | 470mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.764nF | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | WPMtek | |
| Verp. | TO-220F | |
| Output Capacitance(Coss) | 252pF | |
| Pd - Power Dissipation | 113.6W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF | |
| RDS(on) | 470mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.764nF | |
| Gate Charge(Qg) | 57nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This power MOSFET is manufactured using advanced planar stripe DMOS technology. This advanced technology is specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency switch-mode power supplies and active power factor correction based on half-bridge topologies.
Merkmale
KI-Übersetzung
- 20A, 670V, R DS(on) = 350mΩ at V GS = 10V
- Low gate charge (typical 40nC)
- Low C rss (typical 5.7pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| WTM25N65VF | WPMtek | TO-220F | 45 | $ 0.5255 | ||
| WTM30N65AF | WPMtek | TO-220F | 13 | $ 2.1397 | ||
| WTM30N65FF | WPMtek | TO-220F | 3 | $ 1.6764 | ||
| WTM47N65FF | WPMtek | TO-220F | 42 | $ 2.7321 | ||
| WTM20N65CF | WPMtek | TO-220F | 1 | $ 1.2985 | ||
| WTM22N65AF | WPMtek | TO-220F | 39 | $ 0.6679 | ||
| WTM20N65FF | WPMtek | TO-220F | 40 | $ 1.5481 | ||
| WTM40N65AF | WPMtek | TO-220F | 52 | $ 3.0461 | ||
| WTM20N65AF | WPMtek | TO-220F | 50 | $ 1.7366 | ||
| WTM18N65VF | WPMtek | TO-220F | 40 | $ 0.4165 |