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EDA-ModelleEasyEDA
onsemi MBR160G
| Hersteller | |
| Herst.-Teilenr. | MBR160G |
| LCSC-Nr. | C480777 |
| Verp. | DO-204AL |
| Kundennummer | |
| Hauptmerkm. | DIODE SCHOTTKY 60V DO-204AL |
| Datenblatt | onsemi MBR160G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 20 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-204AL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 25A | |
| Current - Rectified | 1A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-204AL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 25A | |
| Current - Rectified | 1A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The MBR150/160 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Merkmale
KI-Übersetzung
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- These are Pb-Free Devices
Anwendungen
KI-Übersetzung
- low-voltage, high-frequency inverters
- free wheeling diodes
- polarity protection diodes
Vorrätig: 196
196 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4458 | $ 0.45 |
| 10+ | $ 0.3508 | $ 3.51 |
| 30+ | $ 0.3114 | $ 9.34 |
| 100+ | $ 0.2606 | $ 26.06 |
| 500+ | $ 0.2393 | $ 119.65 |
| 1,000+ | $ 0.2262 | $ 226.20 |
Standardgehäuse1000/Full Bag | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-204AL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 25A | |
| Current - Rectified | 1A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | onsemi | |
| Verp. | DO-204AL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 750mV@1A | |
| Reverse Leakage Current (Ir) | 500uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 25A | |
| Current - Rectified | 1A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The MBR150/160 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Merkmale
KI-Übersetzung
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- These are Pb-Free Devices
Anwendungen
KI-Übersetzung
- low-voltage, high-frequency inverters
- free wheeling diodes
- polarity protection diodes
C480777 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| SB190-T | DIODES | DO-41 | 20 | $ 0.1369 | ||
| SB180 | EIC | DO-41 | 4,682 | $ 0.7884 | ||
| MBR1100RLG | onsemi | DO-41 | 6,585 | $ 0.1689 | ||
| SR106 | Taiwan Semiconductor | DO-204AL(DO-41) | 85 | $ 0.2619 | ||
| SB160-E3/54 | VISHAY | DO-41 | 6,525 | $ 0.2201 | ||
| SB160-E3/73 | VISHAY | DO-204AL(DO-41) | 3,000 | $ 0.2623 | ||
| SB1100-T | DIODES | DO-41 | 0 | $ 0.1056 | ||
| SB160-T | DIODES | DO-41 | 0 | $ 0.0856 | ||
| SB160E-G | Comchip | DO-41 | 0 | $ 0.104 | ||
| MBR1100G | onsemi | DO-41 | 0 | $ 0.4056 | ||
| SB160TA | SMC | DO-41 | 0 | $ 0.03 | ||
| SB260S-E3/73 | VISHAY | DO-204AL(DO-41) | 0 | $ 0.202 | ||
| SB260-E3/53 | VISHAY | DO-204AL(DO-41) | 0 | $ 0.6229 | ||
| SB260S-E3/54 | VISHAY | DO-204AL(DO-41) | 0 | $ 0.2609 | ||
| SR106-TP | MCC | DO-41 | 0 | $ 0.0639 | ||
| SR106 A0G | Taiwan Semiconductor | DO-204AL(DO-41) | 0 | $ 0.1079 | ||
| 1N6761-1 | MICROCHIP | DO-41 | 0 | $ 189.7339 | ||
| SR160 | MDD(Microdiode Semiconductor) | DO-41 | 0 | $0.0211 $0.0351 | ||
| SB260S_R2_00001 | PANJIT | DO-41 | 0 | $ 0.1048 | ||
| MBR160RLG | onsemi | DO-41 | 0 | $ 0.2169 |