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EDA-ModelleEasyEDA
VISHAY SIHB16N50C-E3
| Hersteller | |
| Herst.-Teilenr. | SIHB16N50C-E3 |
| LCSC-Nr. | C467924 |
| Verp. | D2PAK(TO-263) |
| Kundennummer | |
| Hauptmerkm. | 500V 16A 3V 250W 380mΩ@10V 1 N-channel D2PAK(TO-263) Single FETs, MOSFETs RoHS |
| Datenblatt | VISHAY SIHB16N50C-E3 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 68nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 68nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low figure-of-merit Ron × Qg
- 100% avalanche tested
- Improved gate charge performance
- Improved reverse recovery time (Trr) / reverse recovery charge (Qrr) performance
- RoHS compliant with directive 2002/95/EC
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 13.4389 | $ 13.44 |
| 10+ | $ 13.2472 | $ 132.47 |
| 30+ | $ 12.7777 | $ 383.33 |
| 100+ | $ 12.651 | $ 1265.10 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 68nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | D2PAK(TO-263) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.9nF | |
| Gate Charge(Qg) | 68nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low figure-of-merit Ron × Qg
- 100% avalanche tested
- Improved gate charge performance
- Improved reverse recovery time (Trr) / reverse recovery charge (Qrr) performance
- RoHS compliant with directive 2002/95/EC
C467924 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| STB21N90K5 | ST | D2PAK | 162 | $ 4.5848 | ||
| STB20N95K5 | ST | D2PAK | 916 | $ 9.5987 | ||
| SiHB12N60E-GE3-VB | VBsemi Elec | TO-263(D2PAK) | 20 | $1.2430 $1.4623 | ||
| IPB60R099CPA | Infineon | TO-263-2 | 10 | $ 8.5342 | ||
| IPB95R310PFD7ATMA1 | Infineon | D2PAK | 1 | $ 4.1656 | ||
| FDB20N50F | onsemi | TO-263(D2PAK) | 0 | $ 3.9966 | ||
| SIHB068N60EF-GE3 | VISHAY | D2PAK | 0 | $ 6.8218 | ||
| SIHB22N60EL-GE3 | VISHAY | D2PAK(TO-263) | 0 | $ 5.5672 | ||
| NTB110N65S3HF | onsemi | TO-263 | 0 | $ 3.9354 | ||
| STB47N50DM6AG | ST | D2PAK | 0 | $ 14.0709 |