5% OFF
- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
XNRUSEMI XR20P10F
| Hersteller | XNRUSEMIAsian Brands |
| Herst.-Teilenr. | XR20P10F |
| LCSC-Nr. | C42457029 |
| Verp. | PDFN-8L(5x6) |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 100V 25A PDFN-8L(5x6) |
| Datenblatt | XNRUSEMI XR20P10F |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XNRUSEMI | |
| Verp. | PDFN-8L(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 102W | |
| RDS(on) | 70mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.859nF | |
| Gate Charge(Qg) | 53nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XNRUSEMI | |
| Verp. | PDFN-8L(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 102W | |
| RDS(on) | 70mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.859nF | |
| Gate Charge(Qg) | 53nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
XR20P10F is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR20P10F complies with RoHS standards and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- 100% guaranteed avalanche-rated (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Anwendungen
KI-Übersetzung
- DC-DC converter
- Power management function
- Synchronous rectification application
Vorrätig: 4,750
4,750 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1693$ 0.1609 | $ 0.80 |
| 50+ | $ 0.1476$ 0.1403 | $ 7.02 |
| 150+ | $ 0.1383$ 0.1314 | $ 19.71 |
| 500+ | $ 0.1267$ 0.1204 | $ 60.20 |
| 2,500+ | $ 0.1215$ 0.1155 | $ 288.75 |
| 5,000+ | $ 0.1184$ 0.1125 | $ 562.50 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XNRUSEMI | |
| Verp. | PDFN-8L(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 102W | |
| RDS(on) | 70mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.859nF | |
| Gate Charge(Qg) | 53nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XNRUSEMI | |
| Verp. | PDFN-8L(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 102W | |
| RDS(on) | 70mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.859nF | |
| Gate Charge(Qg) | 53nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
XR20P10F is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR20P10F complies with RoHS standards and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Merkmale
KI-Übersetzung
- Ultra-low gate charge
- 100% guaranteed avalanche-rated (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Anwendungen
KI-Übersetzung
- DC-DC converter
- Power management function
- Synchronous rectification application
C42457029 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |