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Zdjęcia poglądowe
Modele EDAEasyEDA
DOINGTER DOPF12N65
| Producent | DOINGTERAsian Brands |
| Nr części prod. | DOPF12N65 |
| Nr LCSC | C42441865 |
| Opak. | TO-220F |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 650V 12A TO-220F |
| Karta Katalogowa | DOINGTER DOPF12N65 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 8 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 160.8pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 51.5W | |
| RDS(on) | 650mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.002nF | |
| Gate Charge(Qg) | 40.2nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 160.8pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 51.5W | |
| RDS(on) | 650mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.002nF | |
| Gate Charge(Qg) | 40.2nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET utilizes advanced planar technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Funkcje
Tłumaczenie AI
- Drain-Source Voltage (VDS) = 650 V, Drain Current (ID) = 12 A, RDS(ON) < 650 mΩ at VGS = 10 V (typical: 550 mΩ)
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
Na stanie: 782
782 W magazynie, wysyłka natychmiastowa
Niezalecane do nowych projektów
Po wyczerpaniu zapasów produkt zostanie oznaczony jako „Niedostępny”.
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4248$ 0.3909 | $ 0.39 |
| 10+ | $ 0.3337$ 0.3070 | $ 3.07 |
| 50+ | $ 0.2946$ 0.2711 | $ 13.56 |
| 100+ | $ 0.2458$ 0.2262 | $ 22.62 |
| 500+ | $ 0.2247$ 0.2068 | $ 103.40 |
| 1,000+ | $ 0.2116$ 0.1947 | $ 194.70 |
Standardowa Obudowa50/Full Tube | ||
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 160.8pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 51.5W | |
| RDS(on) | 650mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.002nF | |
| Gate Charge(Qg) | 40.2nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DOINGTER | |
| Opak. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 160.8pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 51.5W | |
| RDS(on) | 650mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.002nF | |
| Gate Charge(Qg) | 40.2nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET utilizes advanced planar technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Funkcje
Tłumaczenie AI
- Drain-Source Voltage (VDS) = 650 V, Drain Current (ID) = 12 A, RDS(ON) < 650 mΩ at VGS = 10 V (typical: 550 mΩ)
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
C42441865 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
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|---|---|---|---|---|---|---|
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