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EDA-ModelleEasyEDA
TWGMC TW4435A
| Hersteller | TWGMCAsian Brands |
| Herst.-Teilenr. | TW4435A |
| LCSC-Nr. | C42417408 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 30V 10A SOP-8 |
| Datenblatt | TWGMC TW4435A |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 3 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TWGMC | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 160pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.1W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.25nF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TWGMC | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 160pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.25nF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Merkmale
KI-Übersetzung
- -30V, -10A, RDS(ON)=15mΩ@VGS=-10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
Anwendungen
KI-Übersetzung
- MB / VGA / Vcore POL Applications
- Load Switch
- LED Application
Vorrätig: 1,580
1,580 Ab Lager, sofort versandfertig
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.0744 | $ 0.74 |
| 100+ | $ 0.0588 | $ 5.88 |
| 300+ | $ 0.051 | $ 15.30 |
| 3,000+ | $ 0.0452 | $ 135.60 |
| 6,000+ | $ 0.0405 | $ 243.00 |
| 9,000+ | $ 0.0382 | $ 343.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TWGMC | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 160pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.1W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.25nF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TWGMC | |
| Verp. | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 160pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| RDS(on) | 20mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.25nF | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Merkmale
KI-Übersetzung
- -30V, -10A, RDS(ON)=15mΩ@VGS=-10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
Anwendungen
KI-Übersetzung
- MB / VGA / Vcore POL Applications
- Load Switch
- LED Application
C42417408 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |