Zdjęcia poglądowe
Modele EDAEasyEDA
VBsemi Elec VBM16I10
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | VBM16I10 |
| Nr LCSC | C42412446 |
| Opak. | TO-220 |
| Numer Klienta | |
| Klucz. cechy | 150W 20A 600V TO-220 Single IGBTs |
| Karta Katalogowa | VBsemi Elec VBM16I10 |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 186ns | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 32pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | 70ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.136nF | |
| Output Capacitance(Coes) | 91pF | |
| Gate Charge(Qg) | 82nC@15V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 186ns | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 32pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | 70ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.136nF | |
| Output Capacitance(Coes) | 91pF | |
| Gate Charge(Qg) | 82nC@15V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Ultra-low collector-emitter saturation voltage
- Low turn-off loss
- High-speed switching
- Maximum junction temperature 175°C
- Ultra-low gate charge
- Avalanche energy rated
Zastosowania
Tłumaczenie AI
- Telecommunications
- Consumer Electronics & Computing
- Industrial
- Renewable Energy
- Switching Power Supplies
Brak w magazynie
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.6721 | $ 1.67 |
| 200+ | $ 0.6679 | $ 133.58 |
| 500+ | $ 0.6448 | $ 322.40 |
| 1,000+ | $ 0.634 | $ 634.00 |
Standardowa Obudowa50/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 186ns | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 32pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | 70ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.136nF | |
| Output Capacitance(Coes) | 91pF | |
| Gate Charge(Qg) | 82nC@15V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220 | |
| Pd - Power Dissipation | 150W | |
| Td(off) | 186ns | |
| Td(on) | 28ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 32pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Reverse Recovery Time(trr) | 70ns | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 1.136nF | |
| Output Capacitance(Coes) | 91pF | |
| Gate Charge(Qg) | 82nC@15V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Ultra-low collector-emitter saturation voltage
- Low turn-off loss
- High-speed switching
- Maximum junction temperature 175°C
- Ultra-low gate charge
- Avalanche energy rated
Zastosowania
Tłumaczenie AI
- Telecommunications
- Consumer Electronics & Computing
- Industrial
- Renewable Energy
- Switching Power Supplies
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| FGP10N60UNDF-VB | VBsemi Elec | TO-220 | 0 | $ 1.6891 | ||
| STGP10H60DF-VB | VBsemi Elec | TO-220 | 0 | $ 1.6891 | ||
| AOT10B60D-VB | VBsemi Elec | TO-220 | 0 | $ 1.6891 | ||
| AOT10B65M1-VB | VBsemi Elec | TO-220 | 0 | $ 1.6891 | ||
| FGP20N60UFDTU-VB | VBsemi Elec | TO-220 | 0 | $ 2.8328 | ||
| STGP20H60DF-VB | VBsemi Elec | TO-220 | 0 | $ 2.8328 | ||
| STGP20M65DF2-VB | VBsemi Elec | TO-220 | 0 | $ 2.8328 | ||
| IKP20N60TA-VB | VBsemi Elec | TO-220AB | 0 | $ 2.6372 | ||
| VBM16I20 | VBsemi Elec | TO-220 | 0 | $ 2.8042 | ||
| AIKP20N60CT-VB | VBsemi Elec | TO-220 | 0 | $ 2.8328 |