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Modele EDAEasyEDA
ElecSuper SI2319DS-T1-GE3(ES)
| Producent | ElecSuperAsian Brands |
| Nr części prod. | SI2319DS-T1-GE3(ES) |
| Nr LCSC | C42412240 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 40V 2.3A SOT-23 |
| Karta Katalogowa | ElecSuper SI2319DS-T1-GE3(ES) |
| Części alternatywne | 7 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 27pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 110mΩ@10V;150mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 230pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 27pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 1.2W |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 110mΩ@10V;150mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 230pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. Suitable for DC-DC conversion, power switching, and charging circuits. Standard products are lead-free.
Funkcje
Tłumaczenie AI
- -40V, RDS(ON) = 110 mΩ (typical), VGS = -10 V
- RDS(ON) = 150 mΩ (typical), VGS = -4.5 V
- Fast switching
- High-density cell design for low RDS(ON)
- Material: Halogen-free
- Robust and durable
- Avalanche-rated
- Low leakage current
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Na stanie: 2,730
2,730 W magazynie, wysyłka natychmiastowa
Minimum: 10Wielokrotność: 10Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 10+ | $ 0.056 | $ 0.56 |
| 100+ | $ 0.0443 | $ 4.43 |
| 300+ | $ 0.0384 | $ 11.52 |
| 3,000+ | $ 0.034 | $ 102.00 |
| 6,000+ | $ 0.0305 | $ 183.00 |
| 9,000+ | $ 0.0287 | $ 258.30 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 27pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 1.2W | |
| RDS(on) | 110mΩ@10V;150mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 230pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ElecSuper | |
| Opak. | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 27pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 1.2W |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 110mΩ@10V;150mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 230pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. Suitable for DC-DC conversion, power switching, and charging circuits. Standard products are lead-free.
Funkcje
Tłumaczenie AI
- -40V, RDS(ON) = 110 mΩ (typical), VGS = -10 V
- RDS(ON) = 150 mΩ (typical), VGS = -4.5 V
- Fast switching
- High-density cell design for low RDS(ON)
- Material: Halogen-free
- Robust and durable
- Avalanche-rated
- Low leakage current
Zastosowania
Tłumaczenie AI
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
C42412240 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| DMP4065SQ-7(ES) | ElecSuper | SOT-23 | 2,420 | $ 0.0913 | ||
| AP40P05-ES | ElecSuper | SOT-23 | 3,000 | $ 0.0431 | ||
| DMP4065S-7(ES) | ElecSuper | SOT-23 | 2,180 | $ 0.0496 | ||
| WST4041-ES | ElecSuper | SOT-23 | 2,240 | $ 0.0564 | ||
| SI2319(ES) | ElecSuper | SOT-23 | 1,630 | $ 0.0527 | ||
| PJA3441 R1 00001 | ElecSuper | SOT-23 | 910 | $ 0.0725 | ||
| EST03P06 | ElecSuper | SOT-23-3L | 2,930 | $ 0.116 |