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HXY MOSFET HCSD19537Q3
| Produttore | HXY MOSFETAsian Brands |
| Cod. Prod. | HCSD19537Q3 |
| Cod. LCSC | C42401109 |
| Imballo | DFN5X6-8L |
| Numero Cliente | |
| Attr. chiave | MOSFET 100V 75A DFN5X6-8L |
| Scheda Tecnica | HXY MOSFET HCSD19537Q3 |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN5X6-8L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.944nF | |
| Gate Charge(Qg) | 39.4nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN5X6-8L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.944nF | |
| Gate Charge(Qg) | 39.4nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HCSD19537Q3 utilizes advanced SGT MOSFET technology, offering low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Caratteristiche
Traduzione AI
- Drain-source voltage VDS = 100 V, drain current ID = 75 A
- On-resistance RDS(ON) < 7.5 mΩ at gate-source voltage VGS = 10 V
Applicazioni
Traduzione AI
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Disponibile: 2
2 Pronta consegna
Discontinuo
Esaurite le scorte, il prodotto risulterà "Non disponibile".
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.3807 | $ 0.38 |
| 10+ | $ 0.3711 | $ 3.71 |
| 30+ | $ 0.3663 | $ 10.99 |
| 100+ | $ 0.3599 | $ 35.99 |
Package Standard5000/Full Reel | ||
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN5X6-8L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.944nF | |
| Gate Charge(Qg) | 39.4nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN5X6-8L | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 75A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 97W | |
| RDS(on) | 7.5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.944nF | |
| Gate Charge(Qg) | 39.4nC@10V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
HCSD19537Q3 utilizes advanced SGT MOSFET technology, offering low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Caratteristiche
Traduzione AI
- Drain-source voltage VDS = 100 V, drain current ID = 75 A
- On-resistance RDS(ON) < 7.5 mΩ at gate-source voltage VGS = 10 V
Applicazioni
Traduzione AI
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| DMTH10H009LPS-13-HXY | HXY MOSFET | DFN-8L(5x6) | 198 | $0.6245 $0.7346 | ||
| SIR516DP-T1-BE3-HXY | HXY MOSFET | DFN-8L(5x6) | 198 | $1.1832 $1.4789 | ||
| SIR846ADP-T1-GE3-HXY | HXY MOSFET | DFN-8L(5x6) | 99 | $1.4584 $1.823 | ||
| SIR516DP-T1-RE3-HXY | HXY MOSFET | DFN-8L(5x6) | 99 | $1.3013 $1.6266 | ||
| SIR846DP-T1-GE3-HXY | HXY MOSFET | DFN-8L(5x6) | 99 | $1.3390 $1.6737 | ||
| NTMFS6B05NT1G-HXY | HXY MOSFET | DFN-8L(5x6) | 99 | $1.6455 $2.0568 | ||
| DMT10H009LPSW-13-HXY | HXY MOSFET | DFN-8L(5x6) | 99 | $0.6416 $0.802 | ||
| DMTH10H009LPSQ-13-HXY | HXY MOSFET | DFN-8L(5x6) | 99 | $0.8325 $1.0406 | ||
| IAUCN10S7N074ATMA1-HXY | HXY MOSFET | DFN-8L(5x6) | 97 | $1.1208 $1.401 | ||
| SIR5108DP-T1-RE3-HXY | HXY MOSFET | DFN-8L(5x6) | 94 | $1.0767 $1.3458 |