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Infineon IQDH45N04LM6CGSCATMA1
| Produttore | |
| Cod. Prod. | IQDH45N04LM6CGSCATMA1 |
| Cod. LCSC | C41485829 |
| Imballo | PG-WHTFN-9 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 40V 611A PG-WHTFN-9 |
| Scheda Tecnica | Infineon IQDH45N04LM6CGSCATMA1 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PG-WHTFN-9 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 611A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 333W | |
| RDS(on) | 0.4mΩ@10V;0.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PG-WHTFN-9 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 611A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 333W | |
| RDS(on) | 0.4mΩ@10V;0.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
MLS65R190F is a silicon N-channel enhancement-mode MOSFET fabricated using advanced super-junction technology, delivering reduced conduction losses and improved switching performance. This transistor is suitable for switched-mode power supplies, high-speed switching, and general-purpose applications.
Caratteristiche
Traduzione AI
- N-channel, logic level
- Ultra-low on-resistance R DS(on)
- Excellent thermal resistance performance
- Dual-side heat dissipation optimized design
- 100% avalanche tested
- Lead-free lead finish; RoHS compliant
- Halogen-free per IEC61249-2-21
Applicazioni
Traduzione AI
- PFC power stage
- Switching applications
- Adapters
- Motor control
- DC-DC converters
Disponibile: 50
50 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 7.7722 | $ 7.77 |
| 10+ | $ 6.8832 | $ 68.83 |
| 30+ | $ 6.3418 | $ 190.25 |
| 100+ | $ 5.8874 | $ 588.74 |
Package Standard5000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PG-WHTFN-9 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 611A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 333W | |
| RDS(on) | 0.4mΩ@10V;0.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PG-WHTFN-9 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 611A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 333W | |
| RDS(on) | 0.4mΩ@10V;0.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
MLS65R190F is a silicon N-channel enhancement-mode MOSFET fabricated using advanced super-junction technology, delivering reduced conduction losses and improved switching performance. This transistor is suitable for switched-mode power supplies, high-speed switching, and general-purpose applications.
Caratteristiche
Traduzione AI
- N-channel, logic level
- Ultra-low on-resistance R DS(on)
- Excellent thermal resistance performance
- Dual-side heat dissipation optimized design
- 100% avalanche tested
- Lead-free lead finish; RoHS compliant
- Halogen-free per IEC61249-2-21
Applicazioni
Traduzione AI
- PFC power stage
- Switching applications
- Adapters
- Motor control
- DC-DC converters
C41485829 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IQD005N04NM6CGSCATMA1 | Infineon | WHTFN-9 | 2 | $ 3.4844 | ||
| IQDH45N04LM6CGATMA1 | Infineon | WHTFN-9 | 0 | $ 6.1736 |