MICROCHIP JAN1N984DUR-1/TR
| Hersteller | |
| Herst.-Teilenr. | JAN1N984DUR-1/TR |
| LCSC-Nr. | C3729852 |
| Verp. | DO-213AA |
| Kundennummer | |
| Hauptmerkm. | 1 Independent 91V DO-213AA Single Zener Diodes RoHS |
| Datenblatt | MICROCHIP JAN1N984DUR-1/TR |
| RoHS-Konformität | 2 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@69V | |
| Impedance(Zzt) | 400Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 91V | |
| Impedance(Zzk) | 3kΩ |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@69V | |
| Impedance(Zzt) | 400Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 91V | |
| Impedance(Zzk) | 3kΩ |
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Merkmale
KI-Übersetzung
- Models 1N962BUR-1 through 1N986BUR-1 available in January, with JAN, JANTX, and JANTXV grades, compliant with applicable standards
- Leadless surface mount package
- Metallurgical bonding construction
- Operating temperature range: -65℃ to +175℃
- Storage temperature range: -65℃ to +175℃
- DC power dissipation: 500mW at TEC = +125℃
- Power derating: 10mW/℃ above TEC = +125℃
- Maximum forward voltage: 1.1V at 200mA
- Package: DO-213AA hermetic glass case (MELF, SOD-80, LL34)
- Lead finish: tin/lead
- Maximum thermal resistance (ROJEC): 100℃/W at L = 0 inches
- Maximum thermal impedance (ZJX): 35℃/W
- Diode is positive at the marked (cathode) end during operation
- Device axial COE is approximately +6PPM/℃; mounting surface system must be selected accordingly
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 15.2802 | $ 15.28 |
| 200+ | $ 5.9141 | $ 1182.82 |
| 500+ | $ 5.7058 | $ 2852.90 |
| 1,000+ | $ 5.604 | $ 5604.00 |
Standardgehäuse264/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@69V | |
| Impedance(Zzt) | 400Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 91V | |
| Impedance(Zzk) | 3kΩ |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | ±1% | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 500nA@69V | |
| Impedance(Zzt) | 400Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | 91V | |
| Impedance(Zzk) | 3kΩ |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Models 1N962BUR-1 through 1N986BUR-1 available in January, with JAN, JANTX, and JANTXV grades, compliant with applicable standards
- Leadless surface mount package
- Metallurgical bonding construction
- Operating temperature range: -65℃ to +175℃
- Storage temperature range: -65℃ to +175℃
- DC power dissipation: 500mW at TEC = +125℃
- Power derating: 10mW/℃ above TEC = +125℃
- Maximum forward voltage: 1.1V at 200mA
- Package: DO-213AA hermetic glass case (MELF, SOD-80, LL34)
- Lead finish: tin/lead
- Maximum thermal resistance (ROJEC): 100℃/W at L = 0 inches
- Maximum thermal impedance (ZJX): 35℃/W
- Diode is positive at the marked (cathode) end during operation
- Device axial COE is approximately +6PPM/℃; mounting surface system must be selected accordingly
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

