MICROCHIP 1N6113AE3
| Hersteller | |
| Herst.-Teilenr. | 1N6113AE3 |
| LCSC-Nr. | C3699616 |
| Verp. | Through Hole,D3.6xL4.7mm |
| Kundennummer | |
| Hauptmerkm. | 27.7VC Clamp 18A Ipp TVS DIODE Through Hole |
| Datenblatt | MICROCHIP 1N6113AE3 |
| RoHS-Konformität | 2 Dokumente verfügbar |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole,D3.6xL4.7mm | |
| Clamping Voltage | 27.7V | |
| Operating Temperature | -55℃~+175℃ | |
| Peak Pulse Current (Ipp) | 18A | |
| Peak Pulse Power Dissipation (Ppp) | 500W | |
| Voltage - Breakdown | 19V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 15.2V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole,D3.6xL4.7mm | |
| Clamping Voltage | 27.7V | |
| Operating Temperature | -55℃~+175℃ | |
| Peak Pulse Current (Ipp) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Peak Pulse Power Dissipation (Ppp) | 500W | |
| Voltage - Breakdown | 19V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 15.2V |
Beschreibung
This series of voidless, hermetically sealed bidirectional Transient Voltage Suppressors (TVS) is qualified to MIL-PRF-19500/516 and is ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.7 to 152 volts with a 500 watt rating for a 10/1000 µs pulse. They are very robust in hard-glass construction and use internal “Category r” metallurgical bonds. These devices are available as both a non-suffix part and an “A” version providing different voltage tolerances. These devices are also available in a surface mount MELF package configuration.
Merkmale
- High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
- Triple-layer passivation.
- Internal “Category 1” metallurgical bonds.
- Voidless hermetically sealed glass package.
- JAN, JANTX, and JANTXV qualified versions are available per MIL-PRF-19500/516.
- RoHS compliant versions available (commercial grade only).
Anwendungen
- High-reliability applications
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 11.8204 | $ 11.82 |
| 200+ | $ 4.5752 | $ 915.04 |
| 500+ | $ 4.4147 | $ 2207.35 |
| 1,000+ | $ 4.3345 | $ 4334.50 |
Standardgehäuse1/Full Bag | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole,D3.6xL4.7mm | |
| Clamping Voltage | 27.7V | |
| Operating Temperature | -55℃~+175℃ | |
| Peak Pulse Current (Ipp) | 18A | |
| Peak Pulse Power Dissipation (Ppp) | 500W | |
| Voltage - Breakdown | 19V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 15.2V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Hersteller | MICROCHIP | |
| Verp. | Through Hole,D3.6xL4.7mm | |
| Clamping Voltage | 27.7V | |
| Operating Temperature | -55℃~+175℃ | |
| Peak Pulse Current (Ipp) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Peak Pulse Power Dissipation (Ppp) | 500W | |
| Voltage - Breakdown | 19V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 1uA | |
| Polarity | Bidirectional | |
| Reverse Stand-Off Voltage (Vrwm) | 15.2V |
Beschreibung
This series of voidless, hermetically sealed bidirectional Transient Voltage Suppressors (TVS) is qualified to MIL-PRF-19500/516 and is ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.7 to 152 volts with a 500 watt rating for a 10/1000 µs pulse. They are very robust in hard-glass construction and use internal “Category r” metallurgical bonds. These devices are available as both a non-suffix part and an “A” version providing different voltage tolerances. These devices are also available in a surface mount MELF package configuration.
Merkmale
- High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
- Triple-layer passivation.
- Internal “Category 1” metallurgical bonds.
- Voidless hermetically sealed glass package.
- JAN, JANTX, and JANTXV qualified versions are available per MIL-PRF-19500/516.
- RoHS compliant versions available (commercial grade only).
Anwendungen
- High-reliability applications
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

