TI LM5113SDE/NOPB

The LM5113 device is specifically designed to simultaneously drive high-side and low-side enhancement-mode Gallium Nitride (GaN) FETs in a synchronous buck or half-bridge configuration. The floating high-side driver can drive enhancement-mode GaN FETs with an operating voltage of up to 100V. The device uses a bootstrap technique to generate the high-side bias voltage and internally clamps it at 5.2V, preventing the gate voltage from exceeding the maximum gate-source voltage rating of the enhancement-mode GaN FET. The inputs of the LM5113 are TTL logic compatible and can withstand an input voltage of up to 14V regardless of the VDD voltage. The LM5113 features split-gate outputs, allowing for independent and flexible adjustment of turn-on and turn-off strength. Additionally, the LM5113 has a strong sink current capability, which can keep the gate at a low level, preventing accidental turn-on during switching operations. The LM5113 can operate at frequencies of up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package includes an exposed pad, which helps improve thermal performance. The DSBGA package is compact and has extremely low package inductance.

• Independent high-side and low-side
• TTL logic input
• 1.2A/5A peak source/sink current
• High-side floating bootstrap voltage rail
• Operating voltage up to 100VDC
• Internal bootstrap supply voltage clamp
• Split outputs for adjustable turn-on/turn-off drive strength
• 0.6Ω/2.1Ω pull-down/pull-up resistance
• Fast propagation time (typical 28ns)
• Excellent propagation delay matching (typical 1.5ns)
• Power supply undervoltage lockout
• Low power consumption

• Commercial communication rectifiers
• Commercial DC/DC converters
• Closed-loop stepper motor drivers
• Baseband Unit (BBU)
• Macro Remote Radio Unit (RRU)