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Infineon GS-065-011-1-L-MR
| Produttore | |
| Cod. Prod. | GS-065-011-1-L-MR |
| Cod. LCSC | C35905312 |
| Imballo | PDFN-8(5x6) |
| Numero Cliente | |
| Attr. chiave | 650V 11A 1.7V 150mΩ 1 N-channel N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon GS-065-011-1-L-MR |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PDFN-8(5x6) | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 20pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF | |
| RDS(on) | 150mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 70pF | |
| Gate Charge(Qg) | 2.2nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PDFN-8(5x6) | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 20pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Tipo | Descrizione | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF | |
| RDS(on) | 150mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 70pF | |
| Gate Charge(Qg) | 2.2nC | |
| Type | N-Channel |
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Descrizione
Traduzione AI
GS-065-011-1-L is an enhancement-mode GaN-on-Si power transistor. The properties of GaN enable high current, high breakdown voltage, and high switching frequency. This product incorporates innovative technologies such as the patented Island Technology cell layout, achieving high-current dies and high yield. GS-065-011-1-L is a bottom-cooled transistor that provides extremely low junction-to-case thermal resistance for demanding high-power applications. These combined characteristics deliver highly efficient power switching.
Caratteristiche
Traduzione AI
- 650V enhancement-mode power transistor
- 850V transient drain-source voltage
- Bottom-cooled compact 5×6 mm PDFN package
- R_DS(on) = 150 mΩ
- I_DSmax, DC = 11 A / I_DSmax, Pulse = 19 A
- Ultra-low figure of merit
- Simple gate drive requirements (0V to 6V)
- Transient-tolerant gate drive (-20V/+10V)
- High switching frequency (>1MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source sense pin for optimized gate drive
- RoHS 3 (6+4) compliant
Applicazioni
Traduzione AI
- Power adapters
- LED lighting drivers
- Fast battery charging
- Power factor correction
- Home appliance motor drives
Disponibile: 8
8 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 6.2397 | $ 6.24 |
| 10+ | $ 6.0806 | $ 60.81 |
| 30+ | $ 5.9741 | $ 179.22 |
| 100+ | $ 5.8675 | $ 586.75 |
Package Standard250/Full Bag | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PDFN-8(5x6) | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 20pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF | |
| RDS(on) | 150mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 70pF | |
| Gate Charge(Qg) | 2.2nC | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | PDFN-8(5x6) | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 20pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Tipo | Descrizione | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF | |
| RDS(on) | 150mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 70pF | |
| Gate Charge(Qg) | 2.2nC | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
GS-065-011-1-L is an enhancement-mode GaN-on-Si power transistor. The properties of GaN enable high current, high breakdown voltage, and high switching frequency. This product incorporates innovative technologies such as the patented Island Technology cell layout, achieving high-current dies and high yield. GS-065-011-1-L is a bottom-cooled transistor that provides extremely low junction-to-case thermal resistance for demanding high-power applications. These combined characteristics deliver highly efficient power switching.
Caratteristiche
Traduzione AI
- 650V enhancement-mode power transistor
- 850V transient drain-source voltage
- Bottom-cooled compact 5×6 mm PDFN package
- R_DS(on) = 150 mΩ
- I_DSmax, DC = 11 A / I_DSmax, Pulse = 19 A
- Ultra-low figure of merit
- Simple gate drive requirements (0V to 6V)
- Transient-tolerant gate drive (-20V/+10V)
- High switching frequency (>1MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source sense pin for optimized gate drive
- RoHS 3 (6+4) compliant
Applicazioni
Traduzione AI
- Power adapters
- LED lighting drivers
- Fast battery charging
- Power factor correction
- Home appliance motor drives
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| GS-065-011-1-L-TR | Infineon | PDFN-8(5x6) | 2 | $ 6.984 | ||
| CID18N65D5 | Tokmas | DFN-8(5x6) | 128 | $1.2778 $1.345 | ||
| HCG65140DBA | HXY MOSFET | DFN-8L(5x6) | 62 | $2.9539 $3.3567 | ||
| CID10N65D5 | Tokmas | DFN-8(5x6) | 2,651 | $ 0.9799 | ||
| HIGLR65R140D2 | HXY MOSFET | DFN-8(5x6) | 70 | $2.3210 $2.4956 | ||
| HIGLR60R260D1 | HXY MOSFET | DFN-8(5x6) | 29 | $2.4971 $2.685 | ||
| HCG65200DBA | HXY MOSFET | DFN-8L(5x6) | 25 | $3.7888 $3.9882 | ||
| GS-065-014-6-L-TR | Infineon | PDFN-8(5x6) | 0 | $ 24.1447 | ||
| DK130G70 | Shenzhen DongKe Semicon | PDFN-8(5x6) | 0 | $ 0.6007 | ||
| IGLR60R190D1XUMA1 | Infineon | TSON-8(5x6) | 0 | $ 4.9262 |