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Modelli EDAEasyEDA
ROHM RSQ020N03HZGTR
| Produttore | |
| Cod. Prod. | RSQ020N03HZGTR |
| Cod. LCSC | C3291336 |
| Imballo | SC-95 |
| Numero Cliente | |
| Attr. chiave | 30V 2A 2.5V 1.25W 207mΩ@4V 1 N-channel N-Channel SC-95 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | ROHM RSQ020N03HZGTR |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ROHM | |
| Imballo | SC-95 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 207mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.1nC@5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ROHM | |
| Imballo | SC-95 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 207mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.1nC@5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies and active power factor correction.
Caratteristiche
Traduzione AI
- Low on-resistance
- Built-in gate-source (G-S) protection diode
- Compact SMT package (TSMT6)
- Lead-free terminal plating; RoHS compliant
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Switching applications
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.2351 | $ 0.24 |
| 200+ | $ 0.091 | $ 18.20 |
| 500+ | $ 0.0878 | $ 43.90 |
| 1,000+ | $ 0.0862 | $ 86.20 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ROHM | |
| Imballo | SC-95 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 207mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.1nC@5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ROHM | |
| Imballo | SC-95 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 2A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 1.25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 207mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | 3.1nC@5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
These N-channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies and active power factor correction.
Caratteristiche
Traduzione AI
- Low on-resistance
- Built-in gate-source (G-S) protection diode
- Compact SMT package (TSMT6)
- Lead-free terminal plating; RoHS compliant
- AEC-Q101 qualified
Applicazioni
Traduzione AI
- Switching applications
C3291336 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| RTQ020N05HZG | ROHM | SC-95 | 65 | $ 0.2464 | ||
| RVQ040N05TR | ROHM | SOT-457 | 2,995 | $ 0.3879 | ||
| YJJ05N06A | YANGJIE | SOT-23-6L | 2,960 | $ 0.1455 | ||
| YJJ09N03A | YANGJIE | SOT-23-6L | 435 | $ 0.1617 | ||
| FDC3512-VB | VBsemi Elec | TSOP-6 | 1,145 | $0.1746 $0.2053 | ||
| IRF5802TR-VB | VBsemi Elec | TSOP-6-1.5mm | 15 | $0.2736 $0.2879 | ||
| RSQ045N03HZGTR | ROHM | SC-95 | 0 | $ 0.2832 | ||
| RQ6E045BNTCR | ROHM | SOT-457-6 | 0 | $ 0.3104 | ||
| RQ6E085BNTCR | ROHM | SC-95 | 0 | $ 1.2439 | ||
| RQ6E055BNTCR | ROHM | TSMT6(SC-95) | 0 | $ 0.2588 |