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VISHAY SIR516DP-T1-RE3
| Producent | |
| Nr części prod. | SIR516DP-T1-RE3 |
| Nr LCSC | C3289499 |
| Opak. | PowerPAK-SO-8 |
| Numer Klienta | |
| Klucz. cechy | N-Channel, Current: 63.7A, Voltage: 100V |
| Karta Katalogowa | VISHAY SIR516DP-T1-RE3 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | PowerPAK-SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63.7A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9mΩ@7.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.92nF | |
| Gate Charge(Qg) | 36nC@7.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | PowerPAK-SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63.7A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9mΩ@7.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.92nF | |
| Gate Charge(Qg) | 36nC@7.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- TrenchFET 5th generation power MOSFET
- Ultra-low RDS × Qg figure of merit (FOM)
- Optimized for lowest RDS × Qoss FOM
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- Synchronous Rectification
- Primary-Side Switch
- DC/DC Converter
- OR Gate and Hot-Swap Switch
- Power Supply
- Motor Drive Control
- Battery Management
Na stanie: 3
3 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.9658 | $ 1.97 |
| 10+ | $ 1.935 | $ 19.35 |
| 30+ | $ 1.9139 | $ 57.42 |
| 100+ | $ 1.8927 | $ 189.27 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | PowerPAK-SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63.7A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9mΩ@7.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.92nF | |
| Gate Charge(Qg) | 36nC@7.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | PowerPAK-SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63.7A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 9mΩ@7.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.92nF | |
| Gate Charge(Qg) | 36nC@7.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- TrenchFET 5th generation power MOSFET
- Ultra-low RDS × Qg figure of merit (FOM)
- Optimized for lowest RDS × Qoss FOM
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- Synchronous Rectification
- Primary-Side Switch
- DC/DC Converter
- OR Gate and Hot-Swap Switch
- Power Supply
- Motor Drive Control
- Battery Management
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| SIR570DP-T1-RE3 | VISHAY | PowerPAK-SO-8 | 3,460 | $2.4625 $2.5921 | ||
| AGM15T13A | AGMSEMI | PDFN5x6-8L | 653 | $ 1.1836 | ||
| DMT10H009SPS-13 | DIODES | PowerDI5060-8 | 101 | $ 1.4427 | ||
| SIR846BDP-T1-RE3 | VISHAY | PowerPAK-SO-8 | 18 | $ 1.688 | ||
| FDMS86182 | onsemi | Power56-8 | 6 | $ 1.2083 | ||
| PJMG10H100HNDN | PJSEMI | PDFN-8L(5x6) | 382 | $ 0.4761 | ||
| SIR578DP-T1-RE3 | VISHAY | PowerPAK-SO-8 | 0 | $ 1.3876 | ||
| SIR106ADP-T1-RE3 | VISHAY | PowerPAKSO-8 | 0 | $ 2.4607 | ||
| NCEP1570GU | NCE | DFN-8L(5x6) | 0 | $ 1.1413 | ||
| FH1610G | XIN FEI HONG | PDFN-8(5x6) | 0 | $ 0.4476 |