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EDA-ModelleEasyEDA
Infineon IPB060N15N5ATMA1
| Hersteller | |
| Herst.-Teilenr. | IPB060N15N5ATMA1 |
| LCSC-Nr. | C3289298 |
| Verp. | TO-263-7-3 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 150V 136A TO-263-7-3 |
| Datenblatt | Infineon IPB060N15N5ATMA1 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-7-3 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 136A | |
| Gate Threshold Voltage (Vgs(th)) | 4.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-7-3 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 136A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Excellent gate charge to on-resistance R<sub>DS(on)</sub> product (figure of merit)
- Ultra-low on-resistance R<sub>DS(on)</sub>
- Ultra-low reverse recovery charge (Q<sub>rr</sub>)
- 175 °C operating temperature
- Lead-free terminal plating; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Anwendungen
KI-Übersetzung
- Battery Management - Load Switches
Vorrätig: 2
2 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 13.0439 | $ 13.04 |
| 10+ | $ 11.3174 | $ 113.17 |
| 30+ | $ 10.2643 | $ 307.93 |
| 100+ | $ 9.3824 | $ 938.24 |
Standardgehäuse1000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-7-3 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 136A | |
| Gate Threshold Voltage (Vgs(th)) | 4.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-7-3 | |
| Output Capacitance(Coss) | 1.3nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 136A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.3nF | |
| Gate Charge(Qg) | 68nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Excellent gate charge to on-resistance R<sub>DS(on)</sub> product (figure of merit)
- Ultra-low on-resistance R<sub>DS(on)</sub>
- Ultra-low reverse recovery charge (Q<sub>rr</sub>)
- 175 °C operating temperature
- Lead-free terminal plating; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Anwendungen
KI-Übersetzung
- Battery Management - Load Switches
C3289298 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FDB0690N1507L(TOKMAS) | Tokmas | TO-263-7L | 768 | $1.4550 $1.7117 | ||
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| IPB065N15N3G(TOKMAS) | Tokmas | TO-263-7L | 585 | $ 1.4439 | ||
| IPF067N20NM6ATMA1 | Infineon | TO-263-7 | 3 | $ 10.1751 | ||
| NTBGS4D1N15MC-VB | VBsemi Elec | TO-263-7 | 10 | $2.1605 $2.5417 | ||
| IRFS4321TRL7PP-VB | VBsemi Elec | D2PAK(TO-263-7L) | 10 | $ 2.5417 | ||
| IPB060N15N5ATMA1-VB | VBsemi Elec | TO-263-7L | 10 | $2.1605 $2.5417 | ||
| IPB065N15N3GATMA1-VB | VBsemi Elec | D2PAK-7 | 8 | $2.2504 $2.6475 | ||
| FDB0630N1507L(TOKMAS) | Tokmas | TO-263-7L | 0 | $ 1.6495 | ||
| VBGL71505 | VBsemi Elec | TO-263-7L | 0 | $ 2.7765 |