Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi IRFU214BTU
| Hersteller | |
| Herst.-Teilenr. | IRFU214BTU |
| LCSC-Nr. | C3288515 |
| Verp. | IPAK |
| Kundennummer | |
| Hauptmerkm. | N-Channel, Current:2.2A, Voltage:250V |
| Datenblatt | onsemi IRFU214BTU |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 275pF | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 275pF | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild's proprietary planar DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters and switching power supplies.
Merkmale
KI-Übersetzung
- 2.2A, 250V, R DS(on) = 2.0Ω at V GS = 10V
- Low gate charge (typical 8.1nC)
- Low C rss (typical 7.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.1135 | $ 0.11 |
| 200+ | $ 0.044 | $ 8.80 |
| 500+ | $ 0.0424 | $ 21.20 |
| 1,000+ | $ 0.0417 | $ 41.70 |
Standardgehäuse75/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 275pF | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 275pF | |
| Gate Charge(Qg) | 10.5nC@10V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild's proprietary planar DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switching DC/DC converters and switching power supplies.
Merkmale
KI-Übersetzung
- 2.2A, 250V, R DS(on) = 2.0Ω at V GS = 10V
- Low gate charge (typical 8.1nC)
- Low C rss (typical 7.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
C3288515 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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