Infineon IPA075N15N3
| Hersteller | |
| Herst.-Teilenr. | IPA075N15N3 |
| LCSC-Nr. | C3282329 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | N-Channel, Current:43A, Voltage:150V |
| Datenblatt | Infineon IPA075N15N3 |
| Alternativteile | 10 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 849pF | |
| Pd - Power Dissipation | 39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 43A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.28nF | |
| Gate Charge(Qg) | 93nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 849pF | |
| Pd - Power Dissipation | 39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 43A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.28nF | |
| Gate Charge(Qg) | 93nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
The latest 650 V CoolMOS™ CFD7 expands the CFD7 series voltage range and serves as the successor to the 650 V CoolMOS™ CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS™ CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS™ CFD7 technology meets the highest standards for efficiency and reliability while enabling high power density solutions.
Merkmale
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 175℃
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Anwendungen
- Optimized for phase-shifted full-bridge (ZVS) and LLC applications - Server, telecom, EV charging, solar
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.3836 | $ 4.38 |
| 200+ | $ 1.6973 | $ 339.46 |
| 500+ | $ 1.6371 | $ 818.55 |
| 1,000+ | $ 1.6078 | $ 1607.80 |
Standardgehäuse50/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 849pF | |
| Pd - Power Dissipation | 39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 43A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.28nF | |
| Gate Charge(Qg) | 93nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 849pF | |
| Pd - Power Dissipation | 39W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 43A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.28nF | |
| Gate Charge(Qg) | 93nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Beschreibung
The latest 650 V CoolMOS™ CFD7 expands the CFD7 series voltage range and serves as the successor to the 650 V CoolMOS™ CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS™ CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with outstanding hard commutation robustness. CoolMOS™ CFD7 technology meets the highest standards for efficiency and reliability while enabling high power density solutions.
Merkmale
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 175℃
- Lead-free lead finish; RoHS compliant
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Anwendungen
- Optimized for phase-shifted full-bridge (ZVS) and LLC applications - Server, telecom, EV charging, solar
C3282329 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FDP075N15A-F102 | onsemi | TO-220 | 431 | $ 2.5391 | ||
| WTM0550N15GP | WPMtek | TO-220C-3L | 50 | $ 1.9558 | ||
| WTM0550N15JP | WPMtek | TO-220C-3L | 43 | $ 1.6715 | ||
| MDP15N075TH | MagnaChip Semicon | TO-220 | 388 | $ 1.3972 | ||
| HSP100N15 | HUASHUO | TO-220 | 266 | $ 1.0008 | ||
| IPP110N20N3GXKSA1 | Infineon | TO-220-3 | 181 | $ 2.8901 | ||
| CMP073N15 | Cmos | TO-220 | 25 | $1.6154 $1.7004 | ||
| IPA075N15N3GXKSA1 | Infineon | TO-220-FP | 0 | $ 7.4392 | ||
| HYG065N15NS1P | HUAYI | TO-220FB-3 | 0 | $ 2.5198 | ||
| PSMP075N15NS1_T0_00601 | PANJIT | TO-220AB-L | 0 | $ 2.5388 |