실제 제품과 다를 수 있음
EDA 모델EasyEDA
onsemi NVTFS5824NLTAG
| 제조업체 | |
| 제조사 품번 | NVTFS5824NLTAG |
| LCSC 번호 | C3282048 |
| 포장 | WDFN-8(3.3x3.3) |
| 고객 번호 | |
| 주요 제원 | 60V 37A 2.5V 7.6W 20.5mΩ@10V 1 N-channel N-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs |
| 데이터시트 | onsemi NVTFS5824NLTAG |
| 대체 부품 | 10 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 37A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 7.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 20.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 850pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 37A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 7.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 20.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 850pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
Enhancement-mode MOSFET designed for high-speed, low-noise switching in audio, video, and high-frequency applications. Lateral structure provides low capacitance and ultrafast switching speed. No gate protection Zener diode, resulting in reduced gate leakage and ± voltage capability between gate and substrate. Polysilicon gate ensures manufacturing reliability.
주요 특징
AI 번역
- Compact package (3.3 x 3.3 mm) for space-constrained designs
- Low R<sub>DS(on)</sub> for minimized conduction losses
- Low capacitance for minimized switching losses
- NVTFS5824NLWF - solderable flank version
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
응용 분야
AI 번역
- Fast analog switches
- Fast sample-and-hold circuits
- Pixel-rate switching
- DAC deglitch circuits
- High-speed drivers
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 0.4527 | $ 0.45 |
| 200+ | $ 0.1752 | $ 35.04 |
| 500+ | $ 0.1691 | $ 84.55 |
| 1,500+ | $ 0.166 | $ 249.00 |
표준 패키지1500/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 37A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 7.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 20.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 850pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | WDFN-8(3.3x3.3) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 37A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 7.6W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 20.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 850pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
Enhancement-mode MOSFET designed for high-speed, low-noise switching in audio, video, and high-frequency applications. Lateral structure provides low capacitance and ultrafast switching speed. No gate protection Zener diode, resulting in reduced gate leakage and ± voltage capability between gate and substrate. Polysilicon gate ensures manufacturing reliability.
주요 특징
AI 번역
- Compact package (3.3 x 3.3 mm) for space-constrained designs
- Low R<sub>DS(on)</sub> for minimized conduction losses
- Low capacitance for minimized switching losses
- NVTFS5824NLWF - solderable flank version
- AEC-Q101 qualified with PPAP capability
- Lead-free, RoHS compliant
응용 분야
AI 번역
- Fast analog switches
- Fast sample-and-hold circuits
- Pixel-rate switching
- DAC deglitch circuits
- High-speed drivers
C3282048 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|
| DMTH6016LFVWQ-7 | DIODES | PowerDI3333-8 | 1 | $ 0.5175 | ||
| YJQ62G06A | YANGJIE | DFN3333-8L | 427 | $ 0.4442 | ||
| BMQ100N38 | BORN | DFN3333-8L | 2,635 | $ 0.2494 | ||
| CMSC100N10L | Cmos | DFN-8(3.3x3.3) | 200 | $0.2456 $0.2585 | ||
| NVTFS5824NLTWG | onsemi | WDFN-8(3.3x3.3) | 0 | $ 0.4753 | ||
| DMTH6016LFVWQ-13-A | DIODES | PowerDI3333-8 | 0 | $ 0.7396 | ||
| DMTH6016LFVWQ-7-A | DIODES | PowerDI3333-8 | 0 | $ 0.8397 | ||
| DMTH6016LFVW-13 | DIODES | PowerDI3333-8 | 0 | $ 0.5562 | ||
| DMTH6016LFVW-7 | DIODES | PowerDI3333-8 | 0 | $ 0.5623 | ||
| SISS42LDN-T1-GE3 | VISHAY | PowerPAK1212-8S | 0 | $ 2.5783 |