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Infineon IPL65R115CFD7AUMA1
| Produttore | |
| Cod. Prod. | IPL65R115CFD7AUMA1 |
| Cod. LCSC | C3279349 |
| Imballo | VSON-4 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 650V 24A VSON-4 |
| Scheda Tecnica | Infineon IPL65R115CFD7AUMA1 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | VSON-4 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 32pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 144W | |
| Reverse Transfer Capacitance (Crss@Vds) | 751pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.942nF | |
| Gate Charge(Qg) | 41nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | VSON-4 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 32pF | |
| Current - Continuous Drain(Id) | 24A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 144W | |
| Reverse Transfer Capacitance (Crss@Vds) | 751pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.942nF | |
| Gate Charge(Qg) | 41nC@10V |
Descrizione
The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOS™ CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Caratteristiche
- Ultra-fast body diode
- 650V break down voltage
- Best-in-class RDS(on)
- Reduced switching losses
- Low RDS(on) dependency over temperature
Applicazioni
- Soft Switching topologies
- phase-shift full-bridge (ZVS), LLC Applications – Server
- Telecom
- EV Charging
- Solar
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 4.2527 | $ 4.25 |
| 10+ | $ 3.6038 | $ 36.04 |
| 30+ | $ 3.2182 | $ 96.55 |
| 100+ | $ 2.828 | $ 282.80 |
| 500+ | $ 2.6474 | $ 1323.70 |
| 1,000+ | $ 2.5663 | $ 2566.30 |
Package Standard3000/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | VSON-4 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 32pF | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 144W | |
| Reverse Transfer Capacitance (Crss@Vds) | 751pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.942nF | |
| Gate Charge(Qg) | 41nC@10V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | VSON-4 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 32pF | |
| Current - Continuous Drain(Id) | 24A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 144W | |
| Reverse Transfer Capacitance (Crss@Vds) | 751pF | |
| RDS(on) | 115mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.942nF | |
| Gate Charge(Qg) | 41nC@10V |
Descrizione
The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOS™ CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Caratteristiche
- Ultra-fast body diode
- 650V break down voltage
- Best-in-class RDS(on)
- Reduced switching losses
- Low RDS(on) dependency over temperature
Applicazioni
- Soft Switching topologies
- phase-shift full-bridge (ZVS), LLC Applications – Server
- Telecom
- EV Charging
- Solar
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| IPL60R125P7AUMA1 | Infineon | VSON-4 | 281 | $ 2.1862 | ||
| IPL60R180P6AUMA1 | Infineon | VSON-4 | 31 | $ 4.5062 | ||
| IPL60R095CFD7AUMA1 | Infineon | VSON-4 | 0 | $ 11.1092 | ||
| IPL65R095CFD7AUMA1 | Infineon | VSON-4 | 0 | $ 5.9004 | ||
| IPL65R065CFD7AUMA1 | Infineon | VSON-4 | 0 | $ 12.4537 |